氧化鎵深紫外光感測器之光電特性研究;Photoelectric characteristics of Ga2O3 deep-ultraviolet photodetectors

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/94987

Title:	氧化鎵深紫外光感測器之光電特性研究;Photoelectric characteristics of Ga2O3 deep-ultraviolet photodetectors
Authors:	鍾宇浩;Chung, Yu-Hao
Contributors:	光電科學與工程學系
Keywords:	氧化鎵;濺鍍;Ga2O3;Sputtering
Date:	2024-08-01
Issue Date:	2024-10-09 15:40:51 (UTC+8)
Publisher:	國立中央大學
Abstract:	有鑑於當前5G/6G通訊、電動車及快充等高效率電子技術的發展，使得寬能隙半導體相關技術受到重視。其中氮化鎵(GaN)及碳化矽(SiC) 是兩個相當具有代表性的寬能隙半導體材料，除了這兩者發展較為成熟的材料以外，更為新穎的極寬能隙半導體(Ultra-wide bandgap, UWBG) 概念在近年被提出且應用於功率半導體元件，氧化鎵(Ga2O3)是極寬能隙半導體的代表性材料，該材料具有具備更寬的能隙與更優異的電氣特性，相當具有潛力突破目前氮化鎵及碳化矽所達到的元件性能指標。本論文研究以高能脈衝磁控濺鍍鍍(High Power Impulse Magnetron Sputtering，HiPIMS)磊晶生長氧化鎵於石英等基板，透過高能量且高密度的電漿技術生長磊晶氧化鎵薄膜，實驗主要分為兩部分，第一部分為藉由固定生長溫度 600 度來改變不同基板、調節反應氣體分壓及儲能時間(Off time)，探討在不同製程條件對氧化鎵薄膜結晶性、光學特性的影響，最後磊晶出多晶 (Polycrystalline)之β-Ga2O3薄膜。在紫外光檢測器方面，利用氧化鎵超寬能隙的光學特性來探測深紫外波段的光，並比較在不同電極下，對元件電性的影響，以及元件是否對於紫外光及可見光之響應具有選擇性，並且分析元件在光源開啟與關閉狀態之響應速度。;Due to the current advancements in 5G/6G communications, electric vehicles, and fast charging, high-efficiency electronic technologies have brought wide bandgap semiconductor-related technologies into the spotlight. Gallium nitride (GaN) and silicon carbide (SiC) are two of the wide bandgap semiconductor materials. In addition to these more mature materials, the novel concept of ultra-wide bandgap (UWBG) semiconductors has been proposed in recent years and applied to power semiconductor devices. Gallium oxide (Ga2O3) is a representative material of ultra-wide bandgap semiconductors, possessing a wider bandgap and superior electrical properties, with significant potential to surpass the performance indicators of current gallium nitride and silicon carbide devices. This thesis investigates the epitaxial growth of gallium oxide on quartz and other substrates using High Power Impulse Magnetron Sputtering (HiPIMS). Based on the technique of high-energy and high-density plasma, epitaxial gallium oxide thin films have been grown. The experiment is divided into two main parts. The first part explores the affects of different process conditions on the crystallinity and optical properties of gallium oxide thin films by fixing the growth temperature at 600 degrees Celsius, varying the substrates, adjusting the partial pressure of the working gas, and the off time (storage time) of HiPIMS. Ultimately, polycrystalline β-Ga2O3 thin films are epitaxially grown. Regarding ultraviolet detectors, the optical properties of gallium oxide′s ultra-wide bandgap are utilized to detect deep ultraviolet light. The electrical characteristics of the devices under different electrodes have been discussed and the devices have been measured the selectivity in response to ultraviolet and visible light. Additionally, the response speed of the devices also is analyzed.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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