具組成梯度能隙非晶質矽合金電子注入層與電洞緩衝層的高分子發光二極體; Polymer Light-Emitting Diodes with Composition-Graded Amorhpus Silicon-Alloy Electron Injection and Hole Buffer Layers.

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Title:	具組成梯度能隙非晶質矽合金電子注入層與電洞緩衝層的高分子發光二極體;Polymer Light-Emitting Diodes with Composition-Graded Amorhpus Silicon-Alloy Electron Injection and Hole Buffer Layers.
Authors:	房家壽;Kyar-Shou Fang
Contributors:	電機工程研究所
Keywords:	具組成梯度能隙非晶質矽合金;高分子發光二極體;polymet light-emitting diode;Composition-Graded Amorphous Silicon-Alloy
Date:	2004-06-17
Issue Date:	2009-09-22 11:55:00 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	摘要高分子發光二極體(PLED)是近年來共軛高分子最具有工業應用發展潛力的項目之一。與小分子發光二極體比較，具有製程簡單，低成本，可大面積化，可做撓曲性面板，輕薄化等優點。但目前遇到操作電壓高，壽命短，發光效率低，電極介面接合較差等問題。現今顯示器市場廣大，且薄膜電晶體驅動的高分子發光二極體已成為相當重要的發光組件之一，為使薄膜電晶體與高分子發光元件的製程能進一步整合，本論文探討的主題是利用n-型非晶矽氫及摻雜梯度非晶碳化矽氫薄膜材料作為陰極電極與高分子發光層之間的電子注子層，以降低電子注入的能障層而提高電子注入率。另外，我們亦採用很薄的p-型非晶矽氫及摻雜梯度非晶矽碳化矽氫充當 ITO 透明陽極與高分子發光層之間的緩衝層，以緩衝電洞移動率，而此緩衝層也可阻擋陽極中的銦(In)滲透到高分子發光層所引發的劣化現象對元件特性不良的影響。加入最佳厚度的非晶質電子注入層及很薄緩衝層的PLED結構，在電流密度為 300 mA/cm2 時，本元件的最高亮度可9350 cd/m2，頻譜峰值為579 nm，半高寬為36 nm，發出橘光。 Abstract In order to improve the electroluminescence (EL) properties of polymer light-emitting diodes (PLEDs) with the increased of electron injection efficiency and balanced hole injection, the thin doped composition-graded (CG) n-a-SiC:H and p-a-SiC:H films were employed as the electron injection layer (EIL) and hole buffer layer in the poly(2-methoxy-5-(2’ethyl-hexoxy)-1,4-phenylene-vinylene (MEH-PPV) polymer PLEDs. Also, surface modification of indium-tin-oxide (ITO) electrode by oxygen-plasma treatment was used in this work. By using the above techniques, the electroluminescence (EL) threshold voltage of a PLED could be reduced and its brightness enhanced. The achieved brightness of the best device was 9350 cd/m2, and its EL threshold voltage was 4.2 V.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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