在本論文中，首先建立HBT元件VBIC模型開始，利用各種不同的量測方式，萃取交直流參數，進而建立溫度參數模型，並且加入高頻雜訊模型使其元件模型更完整，透過負載拉移系統，驗證元件模型的微波功率、交叉調變與鄰近通道增益比的線性度、變溫環境下功率及高頻雜訊特性。 接著將HBT元件設計應用於802.11a頻段為5.8GHz兩種功率放大器，分別對線性度與溫度作補償。利用兩種主動偏壓方式，使得放大器具有較好的線性度與對環境溫度變化增益變動的抑制。為了考慮封裝的需要，在電路設計時，先考量ESD保護電路及封裝效應的高頻特性。最後在成功完成兩電路的QFN封裝量測後，利用高頻電磁場模擬軟體HFSS與lumped-element元件建立封裝模型，並加以驗證。 In this thesis, the HBT device VBIC model established first of all used different measurement methods to extract DC and AC parameters. And then establish temperature model parameters and high frequency noise model to complete device model. and the model used load pull system to verify microwave power、intermodulation、adjacent channel power rate、different environment temperature power character. Two types power amplifier for 802.11a is designed and compensate PA for linearity and temperature. The PA used different active bias circuit individually to improve linearity and restrain power gain variation when environment temperature changed. The power amplifiers consider package assembly effect. So the circuit design include ESD prevent component. The package model establish used HFSS simulator and lumped element components in the end.
