參考文獻 |
[1] H. J. Round, “A note on carborundum,” Electrical World 49, 309-310 (1907).
[2] N. Holonyak and S. F. Bevacqua, “Coherent (visible) light emission from Ga(As1-xPx) junctions,” Appl. Phys. Lett. 1, 82-83 (1962).
[3] A. Zukauskas, M. S. Shur, and R. Caska, Introduction to Solid-state Lighting (John Wiley & Sons, New York, 2002).
[4] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlInGaP visible light emitting diodes,” Appl. Phys. Lett. 57, 2937-2939 (1990).
[5] H. Sugawara, M. Ishikawa, and G. Hatakoshi, “High-efficiency InAlGaP/GaAs visible light-emitting diodes,” Appl. Phys. Lett. 58, 1010-1012 (1991).
[6] M. G. Craford, “LEDs for solid state lighting and other emerging applications: status, trends, and challenges,” Proc. SPIE 5941, 1-10 (2005).
[7] H. Amano, N. Sawaki, I. Akasaki, and T. Toyoda, “Metal organic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,” Appl. Phys. Lett. 48, 353-355 (1986).
[8] Y. Koide, N. Itoh, K. Itoh, N. Sawaki, and I. Akasaki, “Effect of AlN buffer layer on AlGaN/a-Al2O3 heterepitaxial growth by metal organic vapor phase epitaxy,” Jpn. J. Appl. Phys. 27, 1156-1161 (1988).
[9] S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal annealing effects on p-type Mg-doped GaN films,” Jpn. J. Appl. Phys. 31, L139-L142 (1992).
[10] Y. Shimizu, K. Sakano, Y. Noguchi, and T. Moriguchi, “Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material,” United States Patent, US 5998925 (1999).
[11] LEDinside, http://www.LEDinside.com/.
[12] 孫慶成,LED 的效率極限與照明光學設計的極致,LED固態照明研討會論文集,中華民國九十八年。
[13] Cree, Inc., http://www.cree.com/.
[14] W. Alexander, “Requirements on LEDs in etendue limited light engines,” Proc. SPIE 7001, 70010F:1-10 (2008).
[15] V. N. Mahajan, Optical Imaging and Aberrations: Part I Ray Geometrical Optics (SPIE PRESS, Washington, 1998).
[16] E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, 2006).
[17] Y. Qin, X. Guo, W. J. Jiang, R. Fang, and G. D. Shen, “Light Extraction Analysis of AlGaInP based LED with Surface Texture,” Proc. SPIE 7635, 763505:1-7 (2009).
[18] B. Hahn, A. Weimar, M. Peter, and J. Baur, “High-power InGaN LEDs: present status and future prospects,” Proc. SPIE 6910, 691004:1-8 (2008).
[19] C. C. Sun, S. Y. Tsai, T. X. Lee, and W. T. Chien, “Enhancement of Angular Flux Utilization and Light Extraction Efficiency based on Micro Array in GaN LEDs,” Proc. SPIE 7617, 76170A:1-5 (2010).
[20] T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Optics Express 15, 6670-6676 (2007).
[21] O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89, 071109:1-3 (2006).
[22] C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Analysis of the emission characteristics of photonic crystal LEDs,” Proc. SPIE 6989, 69890L:1-9 (2008).
[23] T. P. Chen, C. L. Yao, C. Y. Wu, J. H. Yeh, C. W. Wang, and M. H. Hsieh, “Recent Development in High Brightness LEDs,” Proc. SPIE 6910, 691005:1-10 (2008).
[24] T. P. Chen, T. C. Hsu, C. Y. Luo, M. C. Hsu, and T. X. Lee, “Improvement in Light Extraction Efficiency of High Brightness InGaN-Based Light Emitting Diodes,” Proc. SPIE 7216, 72161T:1-10 (2009).
[25] N. Linder, S. Kugler, P. Stauss, K. P. Streubel, R. Wirth, and H. Zull, “High-Brightness Light-Emitting Diodes Using Surface Texture,” Proc. SPIE 4278, 19-25 (2001).
[26] K. Li, S. Inatsugu, “Etendue efficient coupling of an array of LEDs for projection display,” Proc. SPIE 5740, 36-40 (2005).
[27] M. D. B. Charlton, M. E. Zoorob, and T. Lee, “Photonic quasi-crystal LEDs: design, modeling and optimization,” Proc. SPIE 6486, 64860R:1-10 (2007).
[28] K. Bergenek, Ch. Wiesmann, H. Zull, C. Rumbolz, R. Wirth, N. Linder, K. Streubel, and T. F.Krauss, “Beam-shaping properties of InGaN thin-film micro-cavity lightemitting diodes with photonic crystals,” Proc. SPIE 7231, 72310C:1-11 (2009).
[29] C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic Crystal LEDs – designing light extraction,” Laser & Photon. Rev. 3, 262-286 (2009).
[30] Luminus Devices, Inc., http://www.luminus.com/.
[31] LG, http://www.lg.com/.
[32] K. Li, S. Sillyman, S. Inatsugu, “Novel Projection Engine with Dual Paraboloid Reflector and Polarization Recovery Systems,” Proc. SPIE 5289, 246-254 (2004).
[33] S. J. Lee, “Analysis of InGaN high-brightness light-emitting diodes,” Jpn, J. Appl. Phys. 37, 5990-5993 (1998).
[34] C. C. Sun, C. Y. Lin, T. X. Lee, and T. H. Yang, “Enhancement of light extraction of GaN-based LED with introducing micro-structure array,” Opt. Eng. 43, 1700-1701 (2004).
[35] T. X. Lee, C. Y. Lin, S. H. Ma, and C. C. Sun, “Analysis of position-dependent light extraction of GaN-based LED,” Optics Express 13, 4175-4179 (2005).
[36] C. C. Sun, T. X. Lee, S. H. Ma, Y. L. Lee, and S. M. Huang, “Precise optical modeling for lighting based on cross-correlation in mid-field region,” Opt. Lett. 31, 2193-2195 (2006).
[37] T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Optics Express 15, 6670-6676 (2007).
[38] J. P. Berenger, “A perfectly matched layer for the absorption of electromagnetic waves,” J. Comp. Phys. 114, 185-200 (1994).
[39] J. P. Berenger, “Perfectly mateched layer for the FDTD solution of wave-structure interaction problems,” IEEE. Trans. Antennas. Propag. 44, 110-117 (1996).
[40] 李宗憲,氮化鎵發光二極體之光萃取效率分析與晶片設計,國立中央大學光電科學研究所博士論文,中華民國九十七年。
[41] 蔡尚佑,LED晶片微結構對光萃取效率及指向性之模擬與分析,國立中央大學光電科學研究所碩士論文,中華民國九十八年。
|