參考文獻 |
參考文獻:
[1.1] D.M. Rowe, Ph.D., D.Sc. THERMOELECTRICS HANDBOOK (MACRO TO NANO), CRC, New York (2006).
[1.2] H. J. GOLDSMD, B.Sc., and R. W. DOUGL, “The use of semiconductors in thermoelectric refrigeration”, Br. J. Appl. Phys. 5, 386 (1954).
[1.3] G. Mahan, B. Sales and J. Sharp, “Thermoelectric materials: New approaches to an old problem”, Physics Today 50, 42 (1997).
[1.4] Yi Ma, Qing Hao, Bed Poudel, Yucheng Lan, Bo Yu, Dezhi Wang, Gang Chen, and Zhifeng Ren, “Enhanced thermoelectric figure-of-merit in p-Type nanostructured bismuth antimony tellurium alloys made from elemental chunks”, Nano Lett. 8, 2580 (2008).
[1.5] Allon I. Hochbaum, Renkun Chen, Raul Diaz Delgado, Wenjie Liang, Erik C. Garnett, Mark Najarian, Arun Majumdar & Peidong Yang, “Enhanced thermoelectric performance of rough silicon nanowires”, Nature, 451, 163 (2008).
[1.6] Charles Kittel, Introduction to Solid State Physics, eight edition, John Wiley & Sons, Inc(2005).
[1.7] M. Krawiec and K. I. Wysokiński, “Thermoelectric effects in strongly interacting quantum dot coupled to ferromagnetic leads”, Phys. Rev. B 73, 075307 (2006).
[2.1] David M.T. Kuo, “Effect of interlevel coulomb interaction on the tunneling current through a single quantum dot”, Physica E, 27, 355 (2005).
[2.2] Y. Meir, N.S. Wingreen and P.A. Lee, “Low-temperature transport through a quantum dot: The Anderson model out of equilibrium”, Phys. Rev. Lett. 70, 2601 (1993).
[2.3] David M.T. Kuo and Y. C. Chang, “Tunneling current spectroscopy of a nanostructure junction involving multiple energy”, Phys. Rev. Lett. 99, 086803 (2007).
[2.4] David M. T. Kuo and Y. C. Chang, “Electron tunneling rate in quantum dots under a
uniform electric field”, Phys. Rev. B 61, 11051 (2000).
[2.5] David M.T. Kuo and Y. C. Chang, “Tunneling current spectroscopy of a nanostructure junction involving multiple energy”, Phys. Rev. Lett. 99, 086803 (2007)
[2.6] Y. C. Chang and David M.T. Kuo, “Theory of charge transport in a quantum dot tunnel junction with multiple energy levels”, Phys. Rev. B 77, 245412 (2008)
[2.7] David M.T. Kuo, “Thermoelectric properties of multiple quantum dots junction system”, Jap. J. Appl. Phys. 48, 125005 (2009).
[3.1] Padraig Murphy, Subroto Mukerjee, and Joel Moore, “Optimal thermoelectric figure of merit of molecular junction”, Phys. Rev. B 78, 161406 (2008).
[3.2] Joo-Hyoung Lee, Giulia A. Galli, and Jeffrey C. Grossman, “Nanoporous Si as an Efficient Thermoelectric Material”, Nano Lett. 8, 3750 (2008).
[3.3] Yu-Shen Liu, Hao Chen, Xi-Hui Fan, and Xi-Feng Yang, “Inelastic transport through a single molecular dot in the presence of electron-electron interaction”, Phys. Rev. B 73, 115310 (2006).
[3.4] Luis G. C. Rego and George Kirczenow, “Fractional exclusion statistics and the universal quantum of thermal conductance: A unifying approach”, Phys. Rev. B 59, 13080 (1998).
[3.5] Ke-Qiu Chen, Wen-Xia Li,3 Wenhui Duan, Z. Shuai, and Bing-Lin Gu, “Effect of defects on the thermal conductivity in a nanowire”, Phys. Rev. B 72, 045422 (2005).
[3.6] Pierre N. Martin, Zlatan Aksamija, Eric Pop, and Umberto Ravaioli, “Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires”, Nano lett. 10, 1120 (2010).
[3.7] R. Francoa, J. Silva-Valenciaa, M.S. Figueira, “Thermopower and thermal conductance for a Kondo correlated quantum dot”, Journal of Magnetism and Magnetic Materials, 320, e242 (2008).
[3.8] David M.-T. Kuo and Yia-chung Chang, “Thermoelectric and rectification properties of quantum dot junctions”, Phys. Rev. B 81, 205321 (2010).
[4.1] David M. T. Kuo and P. W. Li, “Tunneling current though a single germanium quantum dot”, Jap. J. Appl. Phys. 44, 6429 (2005).
[4.2] Donald A. Neamen, Semiconductor Physics & Devices, third edition, Mc Graw-Hill, (2002).
[4.3] H. D. Barber, “Effective mass and intrinsic concentration in silicon”, Solid-state Electronics 10, 1039 (1967).
[4.4] G. L. Pearson and J. Bardeen, “Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus”, Phys. Rev. 75, 865 (1949).
[4.5] P. W. Li, David M. T. Kuo, W. M. Liao, and W. T. Lai, “Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors”, Appl. Phys. Lett. 88, 213117 (2006).
[4.6] 柯賢文,「熱電轉換及其運用」,科學發展政策報導,5, 51 (2007).
|