中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Items for Author
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 78728/78728 (100%)
Visitors : 34455520      Online Users : 798
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Category

    Loading community tree, please wait....

    Year

    Loading year class tree, please wait....

    Items for Author "Govorkov,AV" 

    Return to Browse by Author

    Showing 6 items.

    Collection Date Title Authors Bitstream
    [光電科學與工程學系] 期刊論文 2001 Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM
    [電機工程研究所] 期刊論文 2004 Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
    [電機工程研究所] 期刊論文 2003 Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
    [電機工程研究所] 期刊論文 2003 Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
    [電機工程研究所] 期刊論文 2000 Spatial distribution of electrical properties in GaN p-i-n rectifiers Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC
    [電機工程研究所] 期刊論文 2000 Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明