中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Items for Author

中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Items for Author

English | 正體中文 | 简体中文 | Items with full text/Total items : 78818/78818 (100%)
Visitors : 34655006 Online Users : 1783

RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope

please add "double quotation mark" for query phrases to get precise results

please goto advance search for comprehansive author search

Adv. Search

Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer

Goto mobile version

Category

Loading community tree, please wait....

Year

Loading year class tree, please wait....

Items for Author "LIN,RM"

Return to Browse by Author

Showing 11 items.

Collection	Date	Title	Authors	Bitstream
[電機工程研究所] 期刊論文	1996	Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates	Chyi,JI; Shieh,JL; Pan,JW; Lin,RM
[電機工程研究所] 期刊論文	1996	Strain relaxation and crystallographic tilt of compositional graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) epilayers grown on GaAs substrates	Shieh,JL; Chyi,JI; Pan,JW; Lin,RM
[電機工程研究所] 期刊論文	1995	SCHOTTKY-BARRIER HEIGHTS OF INXAL1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) EPILAYERS ON GAAS	CHYI,JI; SHIEH,JL; LIN,RJ; PAN,JW; LIN,RM
[電機工程研究所] 期刊論文	1994	BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE	SHIEH,JL; CHYI,JI; LIN,RJ; LIN,RM; PAN,JW
[電機工程研究所] 期刊論文	1994	CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS	CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH
[電機工程研究所] 期刊論文	1994	CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS	YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL
[電機工程研究所] 期刊論文	1994	MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS	CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW
[電機工程研究所] 期刊論文	1994	THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES	YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI
[電機工程研究所] 期刊論文	1994	UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS	HWANG,HP; SHIEH,JL; LIN,RM; CHYI,JI; TU,SL; PENG,CK; YANG,SJ
[光電科學與工程學系] 期刊論文	2010	InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer	Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK
[光電科學與工程學系] 期刊論文	2002	Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs	Lin,RM; Nee,TE; Tsai,MC; Chang,YH; Fan,PL; Chang,RS

::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期：8-24-2009 :::

DSpace Software Copyright © 2002-2004 MIT & Hewlett-Packard / Enhanced by NTU Library IR team Copyright © - 隱私權政策聲明