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    Items for Author "Tsai,JM" 

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    Showing 16 items.

    Collection Date Title Authors Bitstream
    [光電科學研究中心] 期刊論文 2004 Nitride-based near-ultraviolet LEDs with an ITO transparent contact Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM
    [光電科學研究中心] 期刊論文 2003 High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
    [光電科學研究中心] 期刊論文 2003 In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
    [光電科學研究中心] 期刊論文 2003 InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
    [光電科學研究中心] 期刊論文 2003 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
    [光電科學研究中心] 期刊論文 2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    [光電科學研究中心] 期刊論文 2003 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
    [光電科學研究中心] 期刊論文 2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    [光電科學研究中心] 期刊論文 2003 n-UV plus blue/green/red white light emitting diode lamps Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
    [光電科學研究中心] 期刊論文 2003 Si and Zn co-doped InGaN-GaN white light-emitting diodes Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
    [光電科學研究中心] 期刊論文 2003 White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
    [光電科學研究中心] 期刊論文 2002 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
    [光電科學研究中心] 期刊論文 2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
    [光電科學與工程學系] 期刊論文 2005 Nitride-based light-emitting diodes with p-AlInGaN surface layers Kuo,CH; Lin,CC; Chang,SJ; Hsu,YP; Tsai,JM; Lai,WC; Wang,PT
    [物理研究所] 期刊論文 2003 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
    [物理研究所] 期刊論文 2003 Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes Chang,SJ; Chen,CH; Su,YK; Sheu,JK; Lai,WC; Tsai,JM; Liu,CH; Chen,SC

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