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    Items for Author "Yang,MT" 

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    Showing 9 items.

    Collection Date Title Authors Bitstream
    [電機工程研究所] 期刊論文 1994 HIGH UNIFORMITY OF AL0.3GA0.7AS/IN0.15GA0.85AS DOPED-CHANNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON 3'' GAAS SUBSTRATES CHAN,YJ; YANG,MT; YEH,TJ; CHYI,JI
    [電機工程研究所] 期刊論文 1995 AL0.3GA0.7AS/INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS (DCFETS) CHAN,YJ; YANG,MT
    [電機工程研究所] 期刊論文 1995 DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS CHAN,YJ; YANG,MT
    [電機工程研究所] 期刊論文 1993 ENHANCEMENT AND DEPLETION-MODE ALGAAS/IN0.15GA0.85AS HEMTS FABRICATED BY SELECTIVE ION-IMPLANTATION CHAN,YJ; YANG,MT
    [電機工程研究所] 期刊論文 1996 The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs Yang,MT; Chan,YJ; Chang,M
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL
    [電機工程研究所] 期刊論文 1996 Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates Yang,MT; Chan,YJ; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1996 Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In(0.2)Gao(0.8)As heterostructures Yang,MT; Chan,YJ
    [電機工程研究所] 期刊論文 1994 THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI

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