多孔矽上非磊晶形成類晶矽薄膜之研究

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姓名

林裕彬(Yu-Bin Lin) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

多孔矽上非磊晶形成類晶矽薄膜之研究
(Study in Forming Quasi-Crystal Si Film on Porous Silicon layer without Epitaxy)

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摘要(中)

絕緣層矽晶（Silicon on insulator, SOI）材料結構是目前半導體製程中最具發展性的材料之一，可以有效解決奈米尺度下所會遭遇到的問題，如漏電流、閉鎖效應。而Smart-Cut?製程是近來最常用於製作絕緣層矽晶材料之技術。其原理是利用高劑量的氫離子佈植於矽晶圓內，再經晶圓鍵合製程與退火處理，使氫離子聚集產生剝離以達到薄膜轉移之目的。但是離子佈值設備高昂，使用高強度離子束時容易損傷晶圓，且佈值深度難以超過1μm。
本實驗研究之目的為使用電化學蝕刻的方式，在不同的蝕刻參數下，以電化學蝕刻重?雜之P型矽晶圓，蝕刻出不同構造的多孔矽結構，再輔以Argon高溫退火處理，進而做出具有深埋破裂層與數μm厚的多孔回復晶矽薄膜。多孔回復晶矽薄膜可沿著深埋破裂層施以微小應力而產生剝離，達到薄膜轉移之目的。和Smart-Cut?製程相比，可以完成數μm厚的薄膜轉移，成本又便宜非常多。

摘要(英)

The Silicon on Insulator (SOI) is one of the most developmental material in the process of semiconductor now, which can effectively solve the problem in the process of nanometer scale , like leakage effect, latch up. Smart-Cut? is a common technology for manufacturing the SOI. By implanting the high dosage of hydrogen ions into the silicon wafers, followed with wafer bonding process and annealing, the hydrogen ions will gather and crack to finish Layer Transfer. But the implanting depth is difficult to over 1 μm and implanting the high dosage of hydrogen ions may damage the silicon wafer, moreover, the equipment is expensive.
This purpose of the thesis is to fabricating some different porous silicon layers by using electrochemical etching with specific parameters and the heavily doped P-type silicon wafer. Followed with Argon high temperature annealing, the porous silicon with a buried separation layer and capping cavity-free layer is finish.The capping cavity-free layer can be split when a small stress is applied on the buried separation layer. It provides another process to fabricate SOI material. Compared to Smart-Cut? , Our process can make thicker layer transfer and the price is cheaper.

關鍵字(中)

★ 電化學蝕刻
★ 多孔矽
★ 絕緣層矽晶
★ 高溫退火

關鍵字(英)

★ Quasi-Crystal Si Film
★ Silicon on insulator
★ Annealing
★ electrochemical etching
★ Porous Silicon
★ Argon

論文目次

摘要 .................................................................................................................... i
Abstract ............................................................................................................... ii
誌謝 ................................................................................................................... iii
目錄 ................................................................................................................... iv
圖目錄 ............................................................................................................... vi
表目錄 ................................................................................................................ x
第一章緒論 ...................................................................................................... 1
1.1 研究背景 ............................................................................................. 1
1.2 研究目的 ............................................................................................. 3
第二章原理與文獻回顧 .................................................................................. 8
2.1 多孔矽簡介 ......................................................................................... 8
2.2 多孔矽製作技術 ................................................................................. 9
2.3 多孔矽電化學蝕刻的電壓-電流特性 ............................................ 11
2.4 多孔矽蝕刻的表面化學反應 ........................................................... 13
2.5 多孔矽的形成機制 ........................................................................... 16
2.5.1 The Beale Model ..................................................................... 16
2.5.2 The Quantum Model .............................................................. 17
2.5.3 The Diffusion-Limited Model ................................................. 17
2.6 多孔矽的橫向蝕刻 ........................................................................... 18
2.7 多孔矽的高溫退火 ........................................................................... 19
第三章實驗準備與流程 ................................................................................ 30
3.1 實驗試片與器材準備 ....................................................................... 30
3.2 實驗晶片清潔 ................................................................................... 31
3.3 電化學蝕刻設備 ............................................................................... 33
3.4 高溫退火設備 ................................................................................... 34
3.5 分析儀器介紹 ................................................................................... 35
第四章結果與討論 ........................................................................................ 41
4.1 電化學蝕刻多孔矽 ........................................................................... 41
4.1.1 不同定電流的電化學蝕刻多孔矽之結果 ............................ 42
4.2 高溫退火雙層多孔矽 ....................................................................... 44
4.2.1 雙層多孔矽的蝕刻結果 ........................................................ 45
4.2.2 Ar高溫退火之多孔矽結構變化結果 .................................. 46
4.2.3 Ar高溫退火雙層多孔矽之結果 .......................................... 48
4.3 電化學蝕刻多孔矽結果之探討 ....................................................... 50
4.4 高溫退火多孔矽結果之探討 ........................................................... 52
4.5 高溫退火雙層多孔矽的結果之探討 ............................................... 53
第五章結論 .................................................................................................... 79
參考文獻 .......................................................................................................... 81

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指導教授

李天錫(Tien-His Lee)

審核日期

2010-7-14

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