非真空CuInGa(Se,S)2薄膜太陽能電池之研究

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姓名

黃新偉(Hsin-Wei Huang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

非真空CuInGa(Se,S)2薄膜太陽能電池之研究
(A non-vacuum process for CuInGa(Se,S)2 thin film Solar cells)

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摘要(中)

銅銦鎵硒(CIGS)薄膜太陽能電池為最具有量產潛力之一的材料，其效率高達20.1%，在薄膜太陽能電池中最為突出。但是真空製程會有成本過高、不容易大量生產等問題，近來如何在非真空的情況下鍍製CIGS，以降低生產成本成為研究重點之一。
本文利用非真空的方法，並且不同於一般需要在熱退火過程中不間斷地補充Se元素來硒化，更能夠降低整體的生產成本。把Cu2S、In2Se3、Ga與Se混和調製成CIGS前驅物溶液，在大氣下放置自行設計的石墨載具後，使其在快速熱退火中自行有硒化效果，時間僅需3分鐘，即可形成黃銅礦結構的CIGS。
另外，為了取代會有重金屬汙染問題的硫化鎘(CdS)，我們利用化學水浴沉積法來鍍製硫化鋅(ZnS)薄膜，接著在已經鍍有CIGS吸收層，基板面積大小為0.8cm2的不銹鋼薄片上沉積ZnS/i-ZnO/ITO，得到效率為3.926%的薄膜太陽能電池。

摘要(英)

CIGS is the material that has the best potential for the development of thin film solar cells. The 20.1% efficiency for CIGS is the new world record. However, the high vacuum processes needed for production are too expensive and thus not suitable for large scale production. The development of a non-vacuum process is necessary.
In this work, we fabricate Cu(In,Ga)(S,Se)2 absorbers layers by a non-vacuum spray process without external selenization, and it took only 3 minutes to reach the chalcopyrite structure in the Rapid Thermal Annealing (RTA). Besides, we strive to replace CdS with ZnS. The Stainless / CIGS/ ZnS/ ZnO/ITO solar cells with efficiency of 3.926 %.

關鍵字(中)

★ 硫化鋅
★ 銅銦鎵硒
★ 非真空

關鍵字(英)

★ ZnS
★ CIGS
★ non-vacuum

論文目次

摘要 I
ABSTRACT II
致謝 III
目錄 IV
圖目錄 VI
表目錄 IX
第一章緒論 1
1.1研究背景 1
1.2太陽能電池的分類 2
1.3研究動機 5
第二章基本理論 7
2.1 CuInGaSe2太陽能電池 7
2.1.1 CIGS發展歷史 7
2.2 背電極 8
2.3吸收層 10
2.4 緩衝層 13
2.4.1 功用 13
2.4.2 各種緩衝層材料介紹 14
2.5 化學水浴沉積法(Chemical bath deposition) 17
第三章實驗步驟及方法 19
3.1實驗流程與實驗步驟 19
3.2 實驗設備 19
3.2.1實驗藥品 19
3.2.2實驗儀器 20
3.2.3量測儀器 24
第四章實驗結果與討論 30
4.1背電極Mo層 30
4.2 i-ZnO與ITO 33
4.3 緩衝層ZnS 35
4.4 吸收層CuInGa(Se,S)2 40
第五章結論 49
第六章未來展望 52
參考文獻 53

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指導教授

李正中、陳昇暉
(Cheng-Chung Lee、Sheng-Hui Chen)

審核日期

2010-7-29

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