參考文獻 |
[1]史光國,「半導體發光二極體及固體照明」,全華科技圖書股份有限公司印行,2006.
[2] S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes,” Appl. Phys. Lett., vol. 67, pp. 1868–1870, 1995.
[3]M. Razeghi and M. Henini, Optoelectronic Devices: III-Nitrides.Amsterdam, The Netherlands: Elsevier, 2004.
[4] H. Morkoç, Nitride Semiconductors and Devices. Berlin, Germany:Springer, 1999.
[5] http://www.ledinside.com.tw/.
[6] M. L. Wu, Y. C. Lee, S. P. Yang, P. S. Lee, and J. Y. Chang, “Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN micrlens arrays,” Opt. Express 17, 6148-6155, 2009.
[7] M. R. Krames, G. E. Höfler, E. I. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, “High power truncated inverted pyramid AlxGa12x.0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. Vol. 75, pp. 2365, 1999.
[8] J. Y. Kim, M. K. Kwon, J. P. Kim, and S. J. Park, “ Enhanced Light Extraction From Triangular GaN-Based Light-Emitting Diodes,” IEEE Phot. Tech. Lett., Vol. 19, NO.23, 2007.
[9] Chul Huh, Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” Journal of Applied Physics, Vol. 93, No. 11, pp.9383, 2003.
[10] H. Kim, J. Cho, J. W. Lee, S. Yoon, H. Kim, C. Sone, and Y. Park, “Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers, ” Appl. Phys. Lett. Vol. 90, pp. 161110, 2007.
[11] H. W. Huang, H. C. Kuo, J. T. Chu, C. F. Lai, C. C. Kao, T. C. Lu, S. C. Wang, R. J. Tsai, C. C. Yu, and C. F. Lin,” Nitride-based LEDs with nano-scale textured sidewalls using natural lithography,” Institute of physics publishing nanotechnology, vol. 17, 2006.
[12] D. H. Kim, C. O. Cho, Y. G. Roh, H. Jeon, and Y. S. Park, “Enhanced light extraction from GaN-based light emitting diodes with holographically generated two-dimensional photonic crystal patterns.” Appl. Phys. Lett. Vol.87,pp 203508 ,2005.
[13] J. Y. Kim, M. K. Kwon, K. S. Lee, S. J. Park, S. H. Kim , and K. D. Lee,“Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal.” Appl. Phys. Lett. Vol.91,pp 181109 ,2007.
[14] A. David, T. Fuji, B. Moran, S. Nakamrua, S. P. DenBaars , R. Sharma, K. McGroddy, E. L. Hu, and C. Weisbuch ,“Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution.” Appl. Phys. Lett. Vol.88,pp 061124 ,2006.
[15] H. W. Choi, C. W. Jeon, and M. D. Dawson, “ InGaN microring light-emitting diodes,” IEEE Phot. Tech. Lett., Vol. 16, pp 33-35, 2004.
[16] Y. J. Lee, J.M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, “Enhancing the Output Power of GaN-Based LEDs Grown on Wet-Etched Patterned Sapphire Substrates,” IEEE Phot. Tech. Lett., Vol. 18, NO.10, 2006.
[17] T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate, ” Optical Society of America, Vol. 15, No. 11, 2007.
[18] S. H. Huang, R. H. Horng, S. C. Hsu, T. Y. Chen, and D. S. Wuu, “Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light Emitting Diodes, ” Jpn. J. Appl. Phys, Vol. 44, No. 5A, 2005.
[19] S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “ Thermally Stable Mirror Structures for Vertical-Conducting GaN/Mirror/Si Light-Emitting Diodes,” IEEE Phot. Tech. Lett., Vol. 19, pp 1913-1915, 2007.
[20] Y. Sun, T. Yu, Z. Chen, X. Kang, S. Qi, M. Li, G. Lian, S. Huang, R. Xie, and G. Zhang, “Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu,” Semicond. Sci. Technol. 23 ,2008.
[21] C. E. Lee, Y. J. Lee, H. C. Kuo, M. R. Tsai, B. S. Cheng, T. C. Lu, S. C. Wang, and C. T. Kuo, “Enhancement of Flip-Chip Light-Emitting Diodes With Omni-Directional Reflector and Textured Micropillar Arrays,” IEEE Phot. Tech. Lett., Vol. 19, pp 1200-1202, 2007.
[22] C. E. Lee, Y. C. Lee, H. C. Kuo, M. R. Tsai, T. C. Lu, and S. C. Wang, “High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure,” Semicond. Sci. Technol. 23 ,2008.
[23] O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames,“High performance thin-film flip-chip InGaN-GaN light-emitting diodes.” Appl. Phys. Lett. Vol.89,pp 071109 ,2006.
[24] E. Fred Schubert,「Light – Emitting Diodes」.Cambridge, U.K:Cambridge Univ. Press, 2006.
[25] H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson,“GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses.” Appl. Phys. Lett. Vol.89,pp 071109 ,2006.
[26] M. D. B. Charlton, M. E. Zoorob, and T. Lee,“Photonic Quasi-Crystal LEDs Design, modeling, and optimization.” Proc. SPIE 6486, 64860R-1-64860E-10 ,2007.
[27] M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, “Efficiency Enhancement and Beam Shaping of GaN–InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays,” IEEE Phot. Tech. Lett., Vol. 21, pp 257-259, 2009.
[28] Y. J. Lee, H. C. Kuo, T. C. Lu, and S. C. Wang, “High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces,” IEEE Journal of Quantum Electronics., Vol. 42, pp 1196-1201, 2006.
[29] T. S. Kim, S. M. Kim, Y. H. Jang, and G. Y. Jung,“ Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography.” Appl. Phys. Lett. Vol.91,pp 171114 ,2007.
|