鎳矽化物及矽單晶奈米結構陣列之製備與性質研究

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姓名

林東翰(Dong-han Lin) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

鎳矽化物及矽單晶奈米結構陣列之製備與性質研究
(Fabrication of the nickel silicide and silicon nanostructure array and their properties)

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摘要(中)

本研究主要分為兩部分，第一部分主要為在(001)矽晶基材上製備出準直規則排列且尺寸大小可調變的一維矽晶奈米結構陣列，及其性質檢測。而第二部分則利用在矽晶奈米線上沉積適量的鎳金屬薄膜並進行熱退火處理製程步驟在矽晶基材上製備出準直有序排列的鎳矽化物奈米線陣列。
也將對所製備出之各式一維矽晶及鎳矽化物奈米結構陣列之表面形貌、晶體結構、成長動力學、表面濕潤行為、光學特性及場發射性質，利用掃描式電子顯微鏡、穿透式電子顯微鏡、選區電子繞射分析、接觸角量測儀及電子場發射量測進行一系列有系統的分析。

摘要(英)

This study is divided into two parts. The first part mainly focuses on the on the synthesis and characterization of well-ordered arrays of size-controlled, vertically-aligned 1D Si nanostructure on the (001)Si substrates and their properties, and the other part focuses on the growth of periodic vertically-aligned Ni silicide nanowire arrays on Si substrates by appropriate Ni thin film deposition method and heat treatments. The surface morphologies, crystal structures, growth kinetics, surface wettability, optical and field emission properties of the produced nanowire structures were systematically characterized using SEM, TEM, SAED techniques, water contact angle measurement system, and electron emission measurement system.

關鍵字(中)

★ 鎳矽化物
★ 矽單晶奈米線
★ 場發射

關鍵字(英)

★ silicon nanowire
★ nanostructure
★ vertically-aligned
★ Ni thin film

論文目次

目錄
中文摘要.................................................i
英文摘要................................................ii
誌謝...................................................iii
目錄....................................................iv
圖目錄.................................................vii
表目錄..................................................xi
第一章前言及文獻回顧....................................1
1-1 前言................................................1
1-2 矽晶奈米線製備方法-乾式製程.........................2
1-2-1 化學氣相沉積法.................................2
1-2-2 反應性離子蝕刻法...............................6
1-3 矽晶奈米線製備方法-濕式化學蝕刻製程.................7
1-3-1 金屬輔助化學蝕刻法.............................7
1-3-2 金屬催化濕式蝕刻法.............................7
1-4 奈米球微影術........................................8
1-4-1 奈米球的自組裝行為.............................8
1-4-2 奈米球微影術的發展.............................9
1-5 金屬催化結合奈米球微影術製備矽晶奈米線.............10
1-6 金屬矽化物.........................................11
1-6-1 金屬矽化物應用與製程..........................11
1-6-2 鎳金屬薄膜矽化物..............................13
1-6-3 金屬矽化物奈米線..............................13
1-7 氫氧化鉀蝕刻矽晶奈米線.............................14
1-7-1 矽非等向性蝕刻液種類..........................14
1-7-2 氫氧化鉀的蝕刻機制............................15
1-8 接觸角之相關原理...................................16
1-9 場發射電極元件.....................................17
1-9-1 場發射相關理論................................18
1-10 研究動機及目標....................................19
第二章實驗步驟及儀器設備...............................20
2-1 實驗步驟...........................................20
2-1-1 矽晶基材使用前處理............................20
2-1-2 奈米球模板製備................................21
2-1-3 以氧電漿蝕刻控制奈米球模板之直徑..............21
2-1-4 蒸鍍金屬薄膜..................................22
2-1-5 在常溫常壓矽晶基材上製備規則單晶矽奈米線陣列..22
2-1-6 製備準直規則鎳矽化物奈米線陣列................22
2-1-7 製備準直規則奈米圓錐陣列......................23
2-2 試片分析...........................................24
2-2-1掃描式電子顯微鏡 (SEM).........................24
2-2-2穿透式電子顯微鏡 (TEM).........................24
2-2-3真空場發射特性量測系統.........................25
2-2-4紫外光-可見光光譜儀............................25
2-2-5影像式接觸角量測儀.............................25
第三章結果與討論.......................................26
3-1 奈米球模板製備.....................................26
3-2 利用電漿蝕刻法調控奈米球陣列之球徑模板製備.........26
3-3 以金屬催化蝕刻法結合奈米球微影術製備矽單晶奈米線陣列及性質分析................................................27
3-4 氫氧化鉀蝕刻矽晶奈米線及場發射性質量測.............30
3-4-1 製備大面積有序排列之矽晶奈米錐陣列............30
3-4-2矽晶奈米線與矽晶奈米錐陣列的場發射性值量測.....32
3-5 鎳矽化物奈米線之結構及晶向分析鑑定.................35
3-5-1鎳矽化物奈米線之製備...........................35
3-5-2鎳矽化物奈米線之場發射性值量測.................38
3-5-3鎳矽化物之接觸角性值量測.......................41
第四章結論.............................................43
參考文獻...............................................45

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指導教授

鄭紹良(Shao-liang Cheng)

審核日期

2011-8-30

推文