以磁場模擬法設計磁鐵排列改善濺鍍機台之填洞能力

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姓名

陳玄宗(Xuan-Zong Chen) 查詢紙本館藏

畢業系所

能源工程研究所

論文名稱

以磁場模擬法設計磁鐵排列改善濺鍍機台之填洞能力
(Gap filling capability improvement via magnetic field simulation assisted on long throw sputtering PVD of magnet designs and arrangements)

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摘要(中)

此研究利用簡單的方法在固定的深寬比中改進填洞效果，不但成本低廉而且有效改善階梯覆蓋率和增加沉積速率，在未來可應用於3DIC或是半導體產業上效果顯著。
利用有限體積法模擬PVD磁場的磁場分布，採用長距離沉積法加入固定高度的連接器和側邊磁鐵，在加入側邊磁鐵可以增加電子行走距離，有效增加與離子間碰撞機會，側邊磁鐵由三個一組共44組，磁鐵強度約為5500高斯，對於長距離的沉積製程中 ,填洞的腔體增加高度120mm，腔體旁邊圍繞著44組磁鐵。
側邊磁鐵極性跟上方磁鐵中最外圈磁鐵同向，以達到將磁力線拘束在腔體中心的效果。經由此設計，可以明顯改善階梯覆蓋率45%以及增加40%的沉積速率,此研究可應用於3DIC。

摘要(英)

This study used Finite Volume Method to simulate the magnetic profile of PVD (physical vapor deposition) chamber.. From this study, it can be applied to different kinds of target designs. The side magnets consist of a total of 44 sets for one supporter around the chamber adaptor. Each set has three magnets. Each magnet with the magnetic field strength is 5,500 Gauss. For this long throw PVD, adaptor of gap filling chamber has 120 mm height and the 44 sets of magnets are around to adaptor. The polarity of side magnets is the same as the top magnets of the chamber. These magnets can provide very effective and beneficial to the increase of electron mobility and collision frequency with ions. It shows a significant improvement of step coverage on both side walls up to 45%. The deposition rate increases 40%. This study uses a simple method to apply to 3DIC gap filling capability for an increase of aspect (AR). The improvement from this long throw sputtering PVD with side magnets design around the adaptor can provide not only for low cost target design but also provide a very effective gap filling capability with higher deposition rate for 3DIC application

關鍵字(中)

★ 物理氣相沉積
★ 深寬比
★ 三維晶片
★ 磁場
★ 沉積速率

關鍵字(英)

★ deposition rate
★ magnetic field
★ aspect ratio
★ 3DIC
★ PVD

論文目次

第一章緒論 ................................................... 1
1-1 研究目的與動機 .................................................... 1
1-2 文獻回顧 .......................................................... 3
第二章理論背景與介紹 ......................................... 6
2-1 電漿原理 ......................................................... 6
2-1-1 輝光放電 .................................................... 8
2-1-2 離子表面反應 .............................................. 11
2-2 物理氣相沈積法(PVD) ............................................. 13
2-2-1 電漿濺鍍法原理 ............................................. 14
2-2-2 直流磁控濺鍍( DC Magnetron Sputtering ) .................... 14
2-2-3 射頻濺鍍(Radio-Frequency Sputtering Deposition) ............ 17
2-2-4 離子束濺鍍法(Ion Beam Sputtering Deposition) .............. 20
2-2-5 熱蒸鍍法(Thermal Evaporation Deposition) ................... 20
2-3 磁場模組方程式 .................................................. 21
第三章模擬與實驗架構 ........................................ 24
3-1 模擬軟體簡介 ..................................................... 24
3-2 研究架構 ......................................................... 27
3-3 實驗架構 ........................................................ 29
3-4 實驗機台 ......................................................... 29
第四章結果與討論 ............................................ 33
4-1 模擬結果 ........................................................ 33
4-1-1 連接器高度之模擬 .......................................... 33
4-1-2 磁鐵間距模擬 .............................................. 36
4-1-3 磁場分布之模擬 ............................................. 38
4-2 製程結果 ........................................................ 48
第五章結論 .................................................. 64
5-1 結論 ............................................................ 64
參考文獻 ..................................................... 65

參考文獻

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指導教授

利定東(Tomi. Li)

審核日期

2011-9-26

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