參考文獻 |
[1] T. A. Edison, "Manufacture of filaments for incandescent electric lamps," (US Patents 470925, 1892).
[2] B. G. Streetman, and S. Banerjee, Solid State Electronic Devices (Prentice-Hall, 1995).
[3] K. H. Butler, Fluorescent Lamp Phosphors: Technology And Theory (Pennsylvania State University Press, 1980).
[4] 孫培真, 黃建晃, "新世代節能環保照明," 生活科技教育月刊 38, 104-113 (2005).
[5] 蔡慶龍, "從cd到lm談LED的照明應用趨勢," 電機月刊, 11(2), 244 ~ 257(2001)。
[6] B. Liaw, “Developing Trends in LED Lighting Industries as Viewed by Chip Suppliers”, Taiwan Solid State Lighting, A-5, Taipei Word Trade Center, 2012.
[7] 郭浩中, 賴芳儀, 郭守義, LED 原理與應用 (五南, 2009).
[8] H. J. Round, "A note on carborundum," Electrical world 49, 309 (1907).
[9] R. Burnham, W. Streifer, T. Paoli, and N. Holonyak, "Growth and characterization of AlGaAs/GaAs quantum well lasers," Journal of Crystal Growth 68, 370-382 (1984).
[10] H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Applied Physics Letters 48, 353-355 (1986).
[11] S. Nakamura, "GaN growth using GaN buffer layer," Jpn. J. Appl. Phys 30, L1705-L1707 (1991).
[12] E. F. Schubert, T. Gessmann, and J. K. Kim, Light emitting diodes (Wiley Online Library, 2003).
[13] K. Safa, Optoelectronics And Photonics: Principles And Practices (Pearson Education India, 2009).
[14] D. A. Neamen, Semiconductor Physics And Devices: Basic Principles (Irwin, 1992).
[15] D. Yang , “Advanced LED Wafer-Level-Package in AlN for high performance and cost-effective solution”, Taiwan Solid State Lighting, B-4, Taipei Word Trade Center, 2012.
[16] Y. Xi, and E. Schubert, "Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method," Applied Physics Letters 85, 2163-2165 (2004).
[17] D. L. Barton, M. Osinski, P. Perlin, C. J. Helms, and N. H. Berg, "Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes," IEEE, 276-281 (1997).
[18] C. M. Lee, C. C. Chuo, J. F. Dai, X. F. Zheng, and J. I. Chyi, "Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes," Journal of Applied Physics 89, 6554 (2001).
[19] S. Todoroki, M. Sawai, and K. Aiki, "Temperature distribution along the striped active region in high‐power GaAlAs visible lasers," Journal of Applied Physics 58, 1124-1128 (1985).
[20] I. D. Wolf, "Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits," Semiconductor Science and Technology 11, 139 (1996).
[21] D. A. Neamen, Semiconductor Physics And Devices: Basic Principles (Irwin, 1992).
[22] P. Bhattacharya, Semiconductor Optoelectronic Devices (Prentice-Hall, Inc., 1997).
[23] J. Cho, C. Sone, Y. Park, and E. Yoon, "Measuring the junction temperature of III‐nitride light emitting diodes using electro‐luminescence shift," physica status solidi (a) 202, 1869-1873 (2005).
[24] C. M. Wolfe, N. Holonyak, and G. E. Stillman, Physical properties of semiconductors (Prentice Hall Upper Saddle River, NJ, 1989).
[25] V. Colvin, M. Schlamp, and A. Alivisatos, "Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer," Nature 370, 354-357 (1994).
[26] Y. Gu, and N. Narendran, "A non-contact method for determining junction temperature of phosphor-converted white LEDs," SPIE, 107-114 (2004).
[27] E. Hong, "A Non-contact Method to Determine Junction Temperature of High-brightness (AlGaInP) Light-Emitting Diodes," (Master’s thesis, Rensselaer Polytechnic Institute, 2003).
[28] Y. Gu, N. Narendran, and J. P. Freyssinier, "White LED performance," (2004), pp. 119-124.
[29] J. Park, M. Shin, and C. C. Lee, "Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser," Optics letters 29, 2656-2658 (2004).
[30] C. C. Lee, and J. Park, "Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination," Photonics Technology Letters, IEEE 16, 1706-1708 (2004)
[31] Y. Xi, J. Q. Xi, T. Gessmann, J. Shah, J. Kim, E. Schubert, A. Fischer, M. Crawford, K. Bogart, and A. Allerman, "Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods," Applied Physics Letters 86, 031907 (2005).
[32] Y. Xi, and E. Schubert, "Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method," Applied Physics Letters 85, 2163-2165 (2004).
[33] S. Chhajed, Y. Xi, T. Gessmann, J. Q. Xi, J. M. Shah, J. K. Kim, and E. F. Schubert, "Junction temperature in light-emitting diodes assessed by different methods," SPIE, 16-24 (2005).
[34] 林川發, "發光二極體的照明應用," 科學發展月刊 435, 36-41 (2009).
[35] E. S. Yang, Fundamentals of semiconductor devices (McGraw-Hill, 1978).
[36] H. Y. Chou, and T. H. Yang, "Method for controlling light emission of LEDs," SPIE 74220L (2009).
[37] CIE Publication 75:1988. “Spectral Luminous efficiency functions based upon brightness matching for monochromatic point sources, 2o,and 10o fields,”
[38] CIE publication 86:1988. “CIE 1988 2o spectral luminous efficiency functions of photopic vision,”
[39] R. W. G. Hunt, and M. Pointer, Measuring Colour (Wiley, 2011).
[40] R. W. Boyd, "Radiometry and the detection of optical radiation," New York, John Wiley and Sons, 1983, 261 p. 1 (1983).
[41] D. R. Falk, D. R. Brill, and D. G. Stork, "Seeing the light: optics in nature, photography, color, vision, and holography," Seeing the Light: Optics in Nature, Photography, Color, Vision, and Holography, by David R. Falk, Dieter R. Brill, David G. Stork, pp. 480. ISBN 0-471-60385-6. Wiley-VCH, November 1985. 1 (1985).
[42] K. R. Gegenfurtner, and L. T. Sharpe, Color vision: from genes to perception (Cambridge Univ Pr, 2001).
[43] J. Schanda, CIE Colorimetry (Wiley Online Library, 2007).
[44] J. Guild, "The colorimetric properties of the spectrum," Philosophical Transactions of the Royal Society of London. Series A, Containing Papers of a Mathematical or Physical Character 230, 149-187 (1932).
[45] H. Y. Chou, T. H. Hsu, and T. H. Yang, "Effective method for improving illuminating properties of white-light LEDs," SPIE, 33-41 (2005).
[46] N. Ohta, and A. Robertson, "Colorimetry: fundamentals and applications," Recherche 67, 02 (2005).
[47] D. L. MacAdam, "Visual sensitivities to color differences in daylight," JOSA 32, 247-273 (1942).
[48] D. L. MacAdam, "Specification of small chromaticity differences," JOSA 33, 18-26 (1943).
[49] G. Wyszecki, and W. S. Stiles, Color Science (Wiley New York, 1967).
[50] D. K. Schroder, Semiconductor material and device characterization (Wiley-IEEE press, 2006).
[51] 周虹宇,「發光二極體發光光譜特性之模型建立與維持穩定」,國立中央大學光電科學研究所,博士論文,民國100年6月。
[52] CREE, LED components and module, products, http://www.cree.com/led-components-and-modules/products/xlamp/ discrete-directional/xlamp-xrc
[53] CREE, LED components and module, products, http://www.cree.com/led-components-and-modules/products/xlamp/ discrete-directional/xlamp-xrc
[54] Lumileds, products, luxeon-h, http://www.philipslumileds.com/products/luxeon-h
[55] H. Y. Chou, C. C. Chen, and T. H. Yang, "Maintenance of stable light emission in high power LEDs," Microelectronics Reliability 52, 912-915 (2012).
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