| 摘要(英) |
In this thesis, we will investigate the structure of the double-gate MOSFETs. This structure has the following advantages: better short channel effect, low power consumption, good gate-channel control capability, better current driving force, the lower channel leakage current and near ideal sub-threshold swing, etc. Then we design a 2-D device simulator to investigate the device characteristics of the double-gate MOSFET. We analyze the Id-Vg curves of the double gate and single-gate components, sub-threshold swing difference in the different channel length, and double-gate leakage current in the different thickness of the bulk silicon. Finally, we use the threshold voltage formula to verify the validity of the 2-D device simulator,and then analyze the impact of the various design parameters.
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| 參考文獻 |
[1]D. A. Neamen, “ Semiconductor physics and devices, ”3rd ed., McGraw-Hill Companies Inc., p485~p487, 2005.
[2]Yuan Taur, “An Analytical Solution to a Double-Gate MOSFET with Undoped Body,” IEEE ELECTRON DEVICE LETTERS,VOL. 21, NO. 5, MAY 2000.
[3]Leland Chang, Stephen Teng, Tsu-Jae King, Jeffrey Bokor, and Chenming Hu “Gate Length Scaling and Threshold Voltage Control of Double-Gate MOSFETs,”IEDM , 2000,pp719-722.
[4]Kunihiro Suzuki, Yoshiharu Tosaka, and Toshihiro Sugii, ” Analytical Threshold Voltage Model for Short Channel Double-Gate SOI MOSFET’s, ” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 43, NO. 7, JULY 1996.
[5]Michael J. Van der To1 and Savvas G. Chamberlain, ” Drain-Induced Barrier Lowering in Buried-Channel MOSFET’s ,“ IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 40, NO. 4, APRIL. 1993.
[6]Xiaoping Liang, Student Member, ” A 2-D Analytical Solution for SCEs in DG MOSFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 8, AUGUST 2004.
[7]Hamdy Abd El Hamid, Jaume Roig Guitart, and Benjamin Iniguez, Senior Member, ” Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 6, JUNE 2007.
[8]Andreas Tsormpatzoglou, Charalabos A. Dimitriadis, Raphael Clerc, G. Pananakakis, and Gerard Ghibaudo, ” Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 9, SEPTEMBER 2008.
[9]Qiang Chen, Evans M. Harrell, II, and James D. Meindl, ”A Physical Short-Channel Threshold Voltage Model for Undoped Symmetric Double-Gate MOSFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 7, JULY 2003.
[10] M. G. C. de Andrade and J. A. Martino, “Threshold voltages of SOI MOSFETs,” Solid-State Electron, vol. 52, no. 12, pp. 1877–1883, Dec.2008.
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