| 摘要(英) |
In this thesis, we try to derive the analytical equations of the potential, the electric field, and the depletion width in a three-dimensional spherical pn junction. The analytical equations for spherical pn junction is more complex than that for 1D pn junction. However, the depletion width can be obtained by a simple calculation. We compare the analytical results with the results from 3D numerical simulation. With these analytical equations, we can quickly investigate the dependence of the depletion width, the maximum electric field, and the breakdown voltage on the radius of a spherical pn junction. Similarly, the dependence of the depletion width, the maximum electric field, and the breakdown voltage on the doping of a spherical pn junction can be obtained quickly.
|
| 參考文獻 |
[1] J.Y. Peng, “Current Characteristic and Electric-field Analysis in 2-D SOI Semi-conductor Devise Simulation,” Natl. Central Univ., Chung-Li city, Taiwan,R.O.C.,2008.
[2] D. K. Cheng, “Field and Wave Electromagnetics,” Addison-Wesley PublishingCompany, Inc., 1989.
[3] M. Shur, “Introduction to Electronic Devices,” Chapter 3, John Wiley & SonsInc.,1996.
[4] E. S. Yang, “Microelectronic Devices,” Chapter 5, McGraw-Hill, 1988.
[5] S. Selberherr, “Analysis and Simulation of Semiconductor Devices,”Springer-Verlag, New York, pp. 111-112, 1984.
[6] V. I. Smirnov, “A Course of Higher Mathematics,” Chapter 5, Oxford New York,
1964.
[7] B. J. Baliga, “Power Semiconductor Devices,” PWS publishing Company,Boston, 1996.
[8] J. He, et al., "Equivalent function transformation: a semi-empirical analytical Method for predicting the breakdown characteristics of cylindrical- and spherical-abrupt PN junctions," Solid-State Electronics, vol. 44, pp. 2171-2176, Dec 2000.
|
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit