銻化物異質接面場效電晶體之研製及其微波切換器應用

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姓名

余政達(Cheng-Ta Yu) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

銻化物異質接面場效電晶體之研製及其微波切換器應用
(Antimonide-Based Compound Semiconductor (ABCS) HFETs Fabrication and Microwave Switch Applications)

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摘要(中)

本論文利用銻化物材料擁有優異的高速載子傳輸特性，發展低功率及高速的異質接面場效電晶體，並且利用高電子遷移率電晶體來設計串並聯電晶體方式的切換器電路，其切換器電路操作頻率從直流到30 GHz。元件電性部分有直流特性與高頻特性，在閘極長度為2 μm的砷化銦/銻化鋁(InAs/AlSb)之N型通道元件特性及銻化銦鎵/銻化鋁(InGaSb/AlSb)之P型通道元件特性，分別於汲極偏壓為VDS = 0.4 V和VDS = -3 V下，其汲極飽和電流分別為IDSS= 230及14.7 mA/mm，轉導增益分別為gm = 400和43.4 mS/mm，電流增益截止頻率分別為fT = 11.3和1.4 GHz。
本論文中也利用Yang-Long直流及冷態(cold mode)等量測方法分別萃取高速電子電洞遷移率電晶體之內外部參數，並建立元件小訊號模型及之大訊號模型。而切換器電路方面主要為使用N型通道元件來設計，利用串並聯電晶體方式分別設計單刀單擲(Single-Pole Single-Throw，SPST)及單刀雙擲(Single-Pole Double-Throw，SPDT)兩種電路架構。而本研究還另外製作了雙閘極電晶體在這兩種電路架構中，與單閘極電晶體做分析與比較。在直流到10 GHz間雙閘極切換器量測的插入損耗小於4 dB且隔離度大於25 dB。而電路導通在頻率100 MHz時，輸入一分貝增益壓縮點(P1dB)及輸入三階截斷點(IIP3)分別為14和23.4 dBm。

摘要(英)

Antimonide-based compound semiconductors (ABCSs) have a few advantages of low power and high speed because of their superior carrier transport properties. Several switches are proposed using the ABCS technology, and the operation frequency is from dc to 30 GHz. InAs/AlSb N-type and InGaSb/AlSb P-type heterojunction field effect transistors (HFETs) with a gate length of 0.2 μm show good DC and RF performance. With a drain voltages of 0.4 and -3 V, the N-type and P-type HFETs have the maximum drain current densities of 230 and 14.7 mA/mm, the transconductance of 400 and 43.4 mS/mm and the unity current gain frequencies (fT) of 11.3 and 1.4 GHz, respectively.
In this thesis, we used Yang-Long and the cold mode methods, extracting the N- and P-type extrinsic and intrinsic parameters to establish small-signal and large-signal models. The switches are designed using series-shunt n-type HEMTs for single-pole single-throw (SPST) and single-pole double-throw (SPDT) configurations. In addition, the dual-gate devices were fabricated for the SPST and SPDT switches, the results can be compared with the single-gate devices. From DC to 10 GHz, the measured insertion losses and isolations of the proposed switch are less than 4 dB and greater than 25 dB, respectively. When the switch is on state at 100 MHz, the measured input P1dB and IIP3 are 14 and 23.4 dBm.

關鍵字(中)

★ 砷化銦
★ 銻化物
★ 切換器
★ 小訊號模型

關鍵字(英)

★ antimonide-Based Compound
★ InAs
★ small-signal model
★ switch

論文目次

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VII
表目錄 XIII
第一章導論 1
1.1 研究動機 1
1.2 相關研究發展現況 3
1.3 論文架構 6
第二章磊晶結構設計與元件製作 7
2.1 前言 7
2.2 磊晶結構設計 7
2.2.1 砷化銦/銻化鋁(InAs/AlSb)磊晶結構 7
2.2.2 銻化銦鎵/銻化鋁(InGaSb/AlSb)磊晶結構 11
2.3 元件製作流程 14
2.3.1 歐姆接觸製程 14
2.3.2 元件隔離製程 15
2.3.3 蕭特基接觸製程 16
2.3.4 拉線製程 17
2.4 結論 19
第三章砷化銦/銻化鋁與銻化銦鎵/銻化鋁之元件特性 20
3.1 前言 20
3.2 元件性能 20
3.2.1 N型通道砷化銦/銻化鋁之元件 20
3.2.2 P型通道銻化銦鎵/銻化鋁之元件 27
3.3 結論 31
第四章高遷移率電晶體之大、小訊號模型建立 33
4.1 前言 33
4.2 小訊號模型建立流程 33
4.3 小訊號模型建立 34
4.3.1 外部寄生元件參數萃取流程與結果 34
4.3.2 內部寄生元件參數萃取流程與結果 40
4.4 大訊號模型介紹 48
4.5 大訊號模型萃取方法與結果 48
4.5.1 電容、電阻非線性方程式 48
4.6 結論 54
第五章切換器電路設計 55
5.1 前言 55
5.2 切換器設計與製作 55
5.3 量測結果 59
5.3.1 單閘極與雙閘極元件之特性 59
5.3.2 切換器電路之特性 64
5.4 結論 73
第六章結論與未來發展 75
參考文獻 77

參考文獻

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指導教授

張鴻埜、蔡曜聰
(Hong-Yeh Chang、Yao-Tsung Tsai)

審核日期

2012-8-27

推文