多晶矽覆蓋層對矽中佈植氫離子之聚合條件研究

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姓名

李建霖(Chien-lin Li) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

多晶矽覆蓋層對矽中佈植氫離子之聚合條件研究
(The study pf poly-Silicon Cover Layer on the Hydrogen Blistering Condition of Implanted Hydrogen Ions in Silicon)

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摘要(中)

現今超大型積體電路的應用方面，SOI基板比起許多傳統矽基板有著許多更好的優點，而因為Bruel等人開發出smart-cut®的技術，其可製造的高品質SOI結構吸引了大家的關注，相關研究也陸續被討論與發表。其中發現矽晶圓上沉積之多晶矽覆蓋層與二氧化矽層之結合可以有效阻擋佈植在矽晶圓中之氫離子向外擴散。
本研究便是利用其阻擋擴散現象，藉以研究矽晶圓上多晶矽層的存在與否，討論氫離子因受阻於向上擴散，而對於氫離子開始聚合成氫氣泡之溫度與時間等條件之影響，由實驗結果得知，多晶矽沉積層與氧化矽層搭配確實可以使氫離子在較低溫與較少時間的條件下開始聚合，而實驗中所使用到之多晶矽層僅30nm厚，即可以促進氫離子加速成長，期盼此發現能在未來有所應用。

摘要(英)

In recent years, SOI technology has more advantages than traditional bulk Si processing for the application of ULSI . Smart-Cut® Process technology which developed by Bruel and his co-workers arousing a lot of attention because it can fabricate high quality SOI structures. A lot of research works about the Smart-Cut® also continue discussing. We discover that the Poly-Silicon Cover Layer combined with silicon oxide layer can effective stop the out diffusion of the hydrogen ions.
In this study, we use the layer of poly-silicon combine to discuss the influence of the condition of time and temperature that the hydrogen ions start to blister. By experimental result we can find that the combined cover layer indeed let the bubble start to blister at a lower temperature and shorter time. We also find that we can improve the blistering of hydrogen bubble with the only 30 nm thickness poly-si cover layer. We hope that this discovery could be applied in the future.

關鍵字(中)

★ 多晶矽
★ 離子佈植
★ 氫離子擴散

關鍵字(英)

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
表目錄 X
第一章緒論 1
1.1研究背景 1
1.2研究動機與目的 3
第二章原理與文獻回顧 8
2.1 離子佈植應用於薄膜轉移技術 8
2.2 智切法製程(Smart-Cut Process) 8
2.3低壓化學氣相沉積(Low Pressure CVD) 9
2.4蝕刻機制 10
2.5 Tetramethylammonium Hydroxide(TMAH)應用於濕式蝕刻技術 11
2.6氫在矽晶圓中的現象 12
2.6.1 氫氣在氧化矽層與多晶矽層之擴散 14
2.6.2 氣泡與微裂縫形成機制 15
2.6.3微隙縫成長動力學 16
第三章實驗準備與研究流程 32
3.1實驗試片製備 32
3.1.1晶圓清洗 32
3.1.2氧化層生成 33
3.1.3多晶矽層沉積 33
3.1.4 氫離子佈植 34
3.1.5 多晶矽層移除 34
3.2高溫熱處理 35
3.3影像分析 36
3.4 SRIM軟體分析 36
3.5實驗器材與檢測儀器 36
第四章結果與討論 44
4.1多晶矽層之移除 44
4.2多晶矽覆蓋層對氫氣泡產生溫度與時間條件的影響 45
4.3多晶矽覆蓋層對起泡現象的影響討論 47
4.4 SRIM模擬之氫離子怖植造成之缺陷影響討論 47
第五章結論 62
5.1結論 62
參考文獻 64

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指導教授

李天錫

審核日期

2013-6-25

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