參考文獻 |
[1] J. Czochralski,“Ein neues Verfahren zur Messung der Kristallisation geschwindigheit der Metalle,”Zeitschrift fur Physikalische Chemie, Vol.92, pp. 219-221, 1918.
[2] G. K. Teal, J. B. Little,“Growth of germanium single crystals,”Physical Review, Vol.78, pp. 647, 1950.
[3] T. Zhang, G.X. Wang, H. Zhang, F. Ladeinde, V. Prasad,“Turbulent transport of oxygen in the Czochralski growth of large silicon crystals,”Journal of Crystal Growth, Vol. 198/199, pp. 141-146, 1999.
[4] I. Kanda, T. Suzuki, K. Kojima,“Influence of crucible and crystal rotation on oxygen-concentration distribution in large-diameter silicon single crystals,”Journal of Crystal Growth, Vol. 166, pp. 669-674, 1996.
[5] Y. Y. Teng, J. C. Chen, W. T. Wun, C. W. Lu, H. I. Chen, K. Hsieh, C. Y. Chen, W. C. Lan,“Numerical simulation of oxygen transport during the CZ silicon crystal growth process,”Journal of Crystal Growth, Vol. 318, pp. 318-323, 2011.
[6] Y. Y. Teng, J. C. Chen, C. C. Huang, C. W. Lu, W. T. Wun, C. Y. Chen,“Numerical investigation n of the effect of heat shield shape on the oxygen impurity distribution at the crystal–melt interface during the process of Czochralski silicon crystal growth,”Journal of Crystal Growth, Vol. 352, pp.167-172, 2012.
[7] S. Kobayashi,“Effects of an external magnetic field on solute distribution in Czochralski grown crystals - a theoretical analysis,”Journal of Crystal Growth, Vol. 104,pp.617-628, 1990.
[8] P. S. Ravishankar, T. T. Braggins, R.N. Thomas, “Impurities in commercial-scale magnetic Czochralski silicon: Axial versus transverse magnetic fields,”Journal of Crystal Growth, Vol. 104, pp.617-628, 1990.
[9] Japan. Patent, Laid-open No. 217493/1983.
[10] H. Hirata, K. Hoshikawa,“Silicon crystal growth in a cusp magnetic field,”Journal of Crystal Growth, Vol. 96, pp. 747-755, 1989.
[11] R. W. Series,“Effect of a shaped magnetic field on Czochralski silicon growth,”Journal of Crystal Growth, Vol. 97, pp. 92-98, 1989.
[12] Y. C. Won, K. Kakimoto, H. Ozoe,“Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field,”Journal of Crystal Growth, Vol. 233, pp. 622-630, 2001.
[13] D. Vizman, O. Grabner, G. Muller,“3D numerical simulation and experimental investigations of melt flow in an Si Czochralski melt under the influence of a cusp-magnetic field,”Journal of Crystal Growth, Vol.236, pp. 545-550, 2002.
[14] K. Hoshikawa, X. Huang,“Oxygen transport during Czochralski silicon crystal growth,”Materials Science and Engineering B, Vol. 72, pp. 73-79, 2000.
[15] Y. S. Lee, C.H. Chun,“Effects of a cusp magnetic field on the oscillatory convection coupled with crucible rotation in Czochralski crystal growth,”Journal of Crystal Growth, Vol.197, pp. 307-316, 1999.
[16] 宇慧平,隨允康,張峰翊,常新安,安國平,300mm的大直徑直拉單晶矽勾型磁場下生長的數值模擬,無機材料學報,Vol. 20,2005。
[17] Y. Xu, C. Liu, H. Wang, Q. Hao,“The Marangoni convection and the oxygen concentration in Czochralski-grown silicon,”Journal of Crystal Growth, Vol. 254, pp.298-304, 2003.
[18] E. Tomziga, J. Virbulisa, von Ammon W, Y. Gelfgat, L. Gorbunov,“Application of dynamic and combined magnetic fields in the300mm silicon single-crystal growth,”Materials Science in Semiconductor Processing, Vol.5, pp. 347–351, 2003.
[19] L. Liu, T. Kitashima, K. Kakimoto,“Global analysis of effects of magnetic field configuration on melt–crystal interface shape and melt flow in CZ-Si crystal growth,”Journal of Crystal Growth, Vol. 275, pp.2135-2139, 2005.
[20] C. Qisheng, D. Guyu, A. Ebadian, V. Prasad, “Numerical study on flow field and temperature distribution in growth process of 200 mm Czochralski silicon crystals,”Journal of Rare Earths, Vol. 25, pp. 345-348, 2007.
[21] H. Hirata,“Three-dimensional numerical analyses of the effects of a cusp magnetic field on the flows, oxygen transport and heat transfer in a Czochralski silicon melt,”Journal of Crystal Growth, Vol. 125,pp. 181-207,1992.
[22] T.W. Hicks, A.E. Organ, N. Riley,“Oxygen transport in magnetic Czochralski growth of silicon with a non-uniform magnetic field,”Journal of Crystal Growth, Vol. 94, pp. 213-228, 1989.
[23] P. Sahhapathy, ME. Salcudean,“Numerical study of Czochralski growth of silicon in an axisymmetric magnetic field,”Journal of Crystal Growth, Vol. 113, pp.164-180, 1991.
[24] V. V. Kalaev,“Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth,”Journal of Crystal Growth, Vol.303, pp. 203-210,2007.
[25] J. Virbulis, Th. Wetzel, A. Muiznieks, B. Hanna, E. Dornberger,E. Tomzig, A. Muhlbauer, W. v. Ammon,“Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields,”Journal of Crystal Growth, Vol.203, pp.92-99, 2001.
[26] V. Savolainen, J. Heikonen, J. Ruokolainen, O. Anttila, M. Laakso, J. Paloheimo,“Simulation of large-scale silicon melt flow in magnetic Czochralski growth,”Journal of Crystal Growth, Vol. 243, pp.243-260, 2002.
[27] M. Watanabe, M. Eguchi, T. Hibiya,“Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic field,”Journal of Crystal Growth, Vol. 193, pp. 402-412, 1998.
[28] Y. S. Lee, C. H. Chun,“Experiments on the oscillatory convection of low Prandtl number liquid in Czochralski crystal growth under an axial magnetic field,”Journal of Crystal Growth, Vol.198/199, pp.147-153, 1999.
[29] X. Liu, L. Liu, Z. Y. Li, Y. Wang,“Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth,”Journal of Crystal Growth, Vol.360, pp.38-42, 2012.
[30] X. Cen, Y. S. Li, J. Zhan,“Three dimensional simulation of melt flow in Czochralski crystal growth with steady magnetic fields,”Journal of Crystal Growth, Vol. 340, pp. 135-141, 2012.
[31] H. Hirata, K. Hoshikawa,“Homogeneous increase in oxygen concentration in Czochralski silicon crystals by a cusp magnetic field,”Journal of Crystal Growth, Vol.96, pp.777-781, 1989.
[32] Y. H. Hong, B. W. Nam, B. C. Sim,“Effect of asymmetric magnetic fields on crystal–melt interface in silicon CZ process,”Journal of Crystal Growth, Vol. 366,pp.95-100,2013.
[33] K. Kakimoto, L. Liu,“Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth,”Crystal Research and Technology, Vol. 38,pp. 716-725, 2003.
[34]X. Liu, L. Liu, Z. Li, Y. Wang,“Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth,”Journal of Crystal Growth, Vol. 354, pp.101-108,2012.
[35]K. Kakimto, M. Eguchi, H. Ozoe,“Use of an inhomogeneous magnetic field for silicon crystal growth,”Journal of Crystal Growth, Vol.180, pp. 442-449,1997.
[36] K. Kakimoto,“Modeling of Magnetic Fields,”AIP Conference Proceedings, Vol. 916, pp. 159-175, Park City, Utah (USA), 2007 08.
[37] 黃正權,「外加水平式磁場柴氏長晶法生長矽單晶之熱流場數值模擬研究」,國立中央大學,碩士論文,民國101年。
[38] 鄧應揚,「多晶矽太陽能電池晶碇固化生長之熱流場研究」,國立中央大學,博士班資格考計畫書,民國97年。
[39] H. Matsuo, R. B. Ganesh, S. Nakano, L.J. Liu, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto,“Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell,”Journal of Crystal Growth, Vol. 310, pp.4666-4671, 2008.
[40]溫琬婷,「柴氏法生長單晶矽過程之氧雜質傳輸控制數值分析」,國立中央大學,碩士論文,民國99年。
[41] Y. Y. Teng, J. C. Chen, C. W. Lu, C. Y. Chen,“Numerical and experimental study for improving the concavity of the crystalline front in multicrystalline silicon ingots during the directional solidification process,”solidification process, submit to Solar Energy Material & Solar Cells.
[42] Y. Y. Teng, J. C. Chen, C. W. Lu, C. Y. Chen,“The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process,”Journal of Crystal Growth, Vol. 312, pp.1282-1290, 2010.
[43]Y. Y. Teng, J. C. Chen, C. W. Lu, H. I. Chen, Chuck Hsu, C. Y. Chen,“Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process,”Journal of Crystal Growth, Vol. 318, pp.224-229, 2011.
[44] Y.Y. Teng, J.C. Chen, C.W. Lu, C.C. Huang, W.T. Wun, H.I Chen, C.Y. Chen, W.C. Lan,“Numerical simulation of the effect of heater position on the oxygen concentration in the CZ silicon crystal growth process,”International Journal of Photoenergy, 2012 (2012) Article ID 395235. |