| 摘要(英) |
The production of silicon solar cells can use many methods, commonly used high-temperature diffusion and ion implantation to form a PN junction. The activation temperature of dopant is above 900oC for high-temperature diffusion and ion implantation methods, it will consume much energy of these manufacture technologies. In this thesis for the fabrication technology of c-Si solar cells, we can grow epitaxial-like silicon thin films with dopants at low temperatures (<200oC) by ECRCVD. It will diminish issues of energy consumption, as compared with the traditional high-temperature diffusion process.
For the study of epitaxial-like silicon thin films with dopants, we modulate the recipes of ECRCVD, such as microwave power, working pressure, dilution ratio of process gas, and thickness to investigate their structural and electronic characteristics. The thickness and crystalline fraction of the boron-doped thin films were measured by spectroscopic ellipsometry (SE), and their electrical properties such as mobility, concentration, and resistivity were measured by Hall effect measurement. Under the condition of low microwave power and high working pressure, the carrier concentration, and resistivity of a boron-doped epitaxial-like Si thin film with 7 nm thickness is 1.6x1019(cm-3), and 6.7x10-3(Ω-cm), the crystallinity is about 79%. Furthermore, we can control the carrier concentration varied between 2.2x1017 and 2.3x1020(cm-3) under the modulation of process gas dilution ratio.
The c-Si solar cell was fabricated with the structure : ITO / epi-Si:H (p+) / c-Si(n) / μc-Si:H (n+). Doped with a high carrier concentration and a low resistivity of the thin thickness that will reduce the solar light incident on the front of the absorption. The low electrical properties of silicon thin film solar cells can be reduced series resistance, and doped silicon thin films with different silicon solar cell research in the photoelectric conversion characteristics. We modulate the doping gas ratio, microwave power, and working pressure to obtain various carrier concentrations of emitter thin films. When the carrier concentration is above 8x1019 cm-3, the 560 mV of Voc and 35 mA/cm2 of Jsc can be achieved in the performance of solar cells.
Therefore, this study can be in the plane n-type FZ (100) silicon substrate optimum solar cell characteristics: Voc = 560.4mV, Jsc = 37.69 mA/cm2, FF = 73.3%, finally resulting in the efficiency of solar source AM1.5 in 1 cm2 area was 16.23%. |
| 參考文獻 |
[1] 傳統能源之全球蘊藏量預估,經濟部能源局, (2010).
[2] Hassan El Gohary, "Development of Low-Temperature Epitaxial Silicon Films and Application to Solar Cells", (2010).
[3] Sanyo, "Sanyo Electrical Corporation", Japan, (2005).
[4] M. Labrune, M. Moreno, and P. R. I. Cabarrocas, "Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 degrees C by rf-PECVD", Thin Solid Films 518, 2528-2530 (2010).
[5] J.C.A. Huang, Ph.D. Thesis, Univ. of Illinois, (1992).
[6] B. Heinrich, J.A.C. Bland, "Ultrathin Magnetic Structure I", Springer-Verlag, New York , (1994).
[7] A. Matsuda and K. Tanaka, Thin Solar Film 92,171, (1982).
[8] A. Matsuda, in Conference Record of the 25th IEEE photovoltaic Specialist Conference (IEEE, New York, 1996) p.1029, (1996).
[9] R. Robertson, D. Hils, H. Chatham, A. Gallagher, "Radical species in argon‐silane discharges" Appl. Phys. Lett. 43(6), 544, (1983).
[10] 陳治明, 「非晶半導體材料與器件」, 科學出版社, (1991).
[11] Donald A. Neamen, "Semiconductor Physics and Devices", pp. 177~180, (2003).
[12] 黃惠良, 「太陽電池」, 五南出版社 (2008).
[13] N. Fujiwara, H. Sawai, M. Yoneda, K. Nishioka, K. Horie, K. Nakamoto, and H. Abe, "High-Performance Electron-Cyclotron Resonance Plasma-Etching with Control of Magnetic-Field Gradient," Jpn J Appl Phys 1 30, 3142-3146 (1991).
[14] S. Samukawa, and T. Nakamura, "Dependence of Electron-Cyclotron Resonance Plasma Characteristics on Magnetic-Field Profiles," Jpn J Appl Phys 2 30, L1330-L1332 (1991).
[15] D. H. Thang, H. Muta, and Y. Kawai, "Investigation of plasma parameters in 915 MHz ECR plasma with SiH4/H-2 mixtures," Thin Solid Films 516, 4452-4455 (2008).
[16] S.M.SZE, "Semiconductor Devices Physics and technology", pp. 55~56, (2001).
[17] Donald A. Neamen, "Semiconductor Physics and Devices", pp. 177~180, (2003).
[18] R. Shimokawa, M. Yamanaka, and I. Sakata, "Very low temperature epitaxial growth of silicon films for solar cells," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 46, 7612-7618 (2007).
[19] J. K. Rath, and R. E. I. Schropp, "Incorporation of p-type microcrystalline silicon films in amorphous silicon based solar cells in a superstrate structure," Sol Energ Mat Sol C 53, 189-203 (1998).
[20] R. Saleh, and N. H. Nickel, "Raman spectroscopy of B-doped microcrystalline silicon films," Thin Solid Films 427, 266-269 (2003).
[21] H. Fujiwara, and M. Kondo, "Effects of a-Si : H layer thicknesses on the performance of a-Si : H/c-Si heterojunction solar cells," J Appl Phys 101 (2007).
[22] M. Ichimura, M. Hirano, N. Kato, E. Arai, H. Takamatsu, and S. Sumie, "Control of surface recombination of Si wafers by an external electrode," Jpn J Appl Phys 2 38, L292-L294 (1999).
[23] S. R. Dhariwa, and Arun P. Kulshresht, "Theory of back surface field silicon solar cells", Solid-State Electronic Vol. 24, No. 12, (1981).
[24] O. V. Roos, "A simple theory of back surface field (BSF) solar cells" J. Appl. Phys. 49, 3503 , (1978). |
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