氮化鋁鎵/氮化鎵金屬氧化物半導體高電子遷移率場效電晶體之製作與特性分析

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陳彥綸(Yan-Lun Chen) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

氮化鋁鎵/氮化鎵金屬氧化物半導體高電子遷移率場效電晶體之製作與特性分析
(Fabrication and Characterization of AlGaN/GaN Metal-oxide-semiconductor High-electron-mobility Transistors)

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摘要(中)

本論文主要針對在低阻值矽（111）基板上進行氮化鋁鎵/氮化鎵電晶體製作與研究，並且使用原子層沉積（Atomic Layer Deposition, ALD）之複合氧化鋁（Al2O3）/氧化鉿（HfO2）/來實現常開型金氧半場效電晶體之特性。
電晶體製作採用氨氣（NH3）與三甲基鋁（trimethylaluminium, TMA）做表面處理和薄膜氧化層之熱退火（post-deposition annealing），進而改善了元件的漏電流。在汲極到源極距離為26 μm，閘極長度為2 μm的元件上實現出金氧半場效電晶體，其臨限電壓為-9.1 V，其汲極飽和電流為IDSS = 650 mA/mm，導通電阻2.6 mΩ‧cm2，元件的導通電流與截止電流比值為2 × 108 及次臨限斜率為88 mV/dec。三端元件的崩潰電壓約為800 V，其評比效能（Figure-of-Merit）為246 MV/cm2。
此外，針對蕭特基閘極場效電晶體與金氧半場效電晶體的動態導通電阻的進行量測分析，結果發現金氧半場效電晶體可獲得較低的動態電阻/穩態導通電阻比值，並討論溫度變化對動態電阻的影響。

摘要(英)

This study focuses on AlGaN/GaN HEMTs on low-resistance Si（111）substrate with bilayer gate oxide（Al2O3/HfO2）by atomic-layer-deposition（ALD）to achieve the normally-on metal-oxide-semiconductor high electron mobility transistors.
To fabricate metal-oxide-semiconductor high-electron-mobility-transistors, high-k Al2O3/HfO2（1/6 nm）gate dielectrics deposited by ALD were used with NH3 and TMA pre-treatments in this study. The NH3 pre-treatment was carried out before loading into ALD chamber, and TMA（50 cycles）pre-treatment was performed before Al2O3/HfO2 deposition in the ALD chamber. After Al2O3/HfO2 deposition, devices with and without post-deposition annealing（in N2 ambient at 450 C）were investigated and compared. Device（LG = 2 μm 、LGS = 4 μm、LGD = 20 μm）fabricated with NH3 and TMA pre-treatments and post-deposition annealing showed threshold voltage VTH of -9.1 V, drain saturation current Idss of 650 mA/mm, specific on-resistance Ron of 2.6 mΩ‧cm2, on/off current ratio of 2 × 108, sub-threshold slope (SS) of 88 mV/dec, beeakdown voltage of about 800 V, and the Figure-of-Merit of 246 MV/cm2.
In addition, dynamic resistances of the Schottky-gate high electron mobility transistors and Metal-oxide-semiconductor high electron mobility transistors were analyzed. The experimental results showed that Metal-oxide-semiconductor high electron mobility transistors demonstrated lower dynamic resistance to steady-state resistance ratio. Moreover, the temperature variation of the dynamic resistance was discussed.

關鍵字(中)

★ 金屬氧化物半導體高電子遷移率場效電晶體
★ 薄膜氧化層之熱退火

關鍵字(英)

★ metal-oxide-semiconductor high electron mobility transistors
★ post-deposition annealing

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VII
表目錄 XI
第一章緒論 1
1.1前言 1
1.2氮化鎵高電子遷移率場效電晶體之發展與相關研究 4
1.3本論文研究動機與目的 8
1.4論文架構 8
第二章氮化鋁鎵/氮化鎵場效電晶體於矽基板電晶體之磊晶與製程 9
2.1 前言 9
2.2氮化鋁鎵/氮化鎵成長於矽基板之磊晶結構 9
2.3蕭特基閘極場效電晶體製作與特性分析 13
2.3.1蕭特基閘極場效電晶體製作流程 13
2.3.2電晶體佈局與傳輸線模型 17
2.3.3蕭特基閘極場效電晶體直流特性分析 21
2.4金氧半場效電晶體製作 26
2.4.1閘極氧化層的成長方式 27
2.4.2閘極氧化層材料的選擇 28
2.4.3氮化鋁鎵/氮化鎵金氧半場效電晶體元件製作流程 32
2-5結論 34
第三章氮化鋁鎵/氮化鎵金氧半場效電晶體特性分析與比較 35
3.1前言 35
3.2金氧半場效電晶體量測結果與分析 35
3.2.1沉積鈍化層前的表面處理 40
3.2.2 ALD氧化層之熱退火處理 41
3.3 不同ALD氧化層之熱退火溫度之元件特性比較 42
3.4 結論 45
第四章氮化鋁鎵/氮化鎵場效電晶體之動態與變溫測量分析 47
4.1前言 47
4.2場效電晶體閘極電容特性分析 47
4.2.1閘極電容基本量測介紹 47
4.2.2電容-電壓曲線萃取介面缺陷密度 49
4.2.3電容-電壓特性曲線萃取載子濃度及深度關係 54
4.3場效電晶體之電流崩塌效應 55
4.3.1電流崩塌效應簡介 55
4.3.2蕭特基閘極與金氧半場效電晶體之電流崩塌效應分析比較 57
4.3.3電流崩塌效應之變溫測量 62
4.4場效電晶體溫度變化特性 67
4.4.1溫度對閘極漏電流特性之影響 71
4.5結論 74
第五章結論與未來展望 75
參考文獻 77
附錄Ⅰ 蕭特基閘極場效電晶體製作流程 81
附錄Ⅱ 金氧半場效電晶體製作流程 84

參考文獻

[1] Guerra and J. Zhang, “ GaN Power Devices for Micro Inverters” Power Electronic Europe, issue 4, June 2010.
[2] L. F. Eastman and U. K. Mishra, “The toughest transistor yet GaN transistors,” IEEE Spectr, vol. 3, May 2002.
[3] Wayne Johnson and Edwin L. Piner, “GaN HEMT Technology” W. Johnson., Kopin Corporation.,2012
[4] J. J. Freedsman, Toshiharu Kubo, S. L. Selvaraj, and Takashi Egawa, “Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors, ” Jpn. J. Appl. Phys 50 ,2011.
[5] Hong Zhou, Geok Ing Ng, Z. H. Liu and Subramaniam Arulkumaran, “Improved device performance by post-oxide annealing in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor on Si,” Appl. Phys Express, 2011.
[6] M. F. Romero, A.Jimenez, M. H. Sara, “Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance,” IEEE Trans. Electron Devices, vol. 59, no. 2, Feb., 2012.
[7] Ogyun Seok, Woojin Ahn, M. K. Han and M. W. Ha, “High on/off current ratio AlGaN /GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators,” Semicond. Sci. Technol, 2013.
[8] C. T. Chang, T. H. Hsu, E.Y. Chang, Y.-C. Chen, H.D. Trinh and K.J. Chen“ Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage,” Electron. Lett, Sep. vol. 46 no. 18. 2010.
[9] K. W. Kim, S. D. Jung, D. S. Kim, K. S. Im, H. S Kang, J. H. Lee, Y. Bae, D. H. Kwon, Sorin Cristoloveanu, “Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs,” Microelectronic Engineering 88., 2011.
[10] I. Hwang, H. Choi, J.W. Lee, H. S. Choi, J.Kim, J.Ha, C.Y. Um, S. K. Hwang, J. Oh, J. Y. Kim, J. K. Shin, Y. Park, U-in Chung, I. K . Yoo, and K. Kim,” 1.6k V, 2.9 mΩ -cm2 Normally-off p-GaN HEMT Device”, in Proc. IEEE Int. Symp. Power Semicond. Devices ICs 3-7., Jun. 2012.
[11] F. Medjdoub, J. Derluyn, K. Cheng, M. Leys, S. Degroote, D. Marcon, D. Visalli, M. V. Hove, M. Germain, and G. Borghs, “Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate,” IEEE Electron Device Lett., vol. 31, no. 2, Feb. 2010.
[12] Y. C. Kong, Y.D. Zheng, C. H. Zhou, S.L. Gu, R. Zhang, P. han, Y. Shi, R. l. Jiang, “ Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures,” Appl. Phys. A 84, 95–98, 2006.
[13] K. Schroder, Semiconductor Material and Device Characterization. John Wiley & Sons, Inc., 2006
[14] 陳彥凱, “銻化物金屬-絕緣物-半導體異質接面場效電晶體之元件發展與特性研究,”碩士論文,國立中央大學, 2012.
[15] “Atomic Layer Deposition,” BENEQ Technology
[16] Rathnait D. Long and Paul C. McIntyre, “Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices,” Materials 2012.
[17] Chihoko Mizue, Yujin Hori, Marcin Miczek and Tamotsu Hashizume, “Capacitance-Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface,” Jpn. J. Appl. Phys, 2011.
[18] B. Y. Chou, W. C. Hsu, C. S. Lee, H. Y. Liu, and C. S. Ho, “Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin ﬁlm growth method,” Semicond. Sci. Technol. 28 , 2013.
[19] J. W. Chung, J. C. Roberts, E. L. Piner, and Tomas Palacios, ” Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs,” IEEE Electron Device Lett., vol. 29, no. 11, Nov.2008.
[20] T. A. MASSOOD, “A Relationship between Interface Trap Density andTransconductance in Depletion Mode Field Effect Transistors,” Solid-State Electron. vol.38, no 7,pp,1395-1400,1955.
[21] M. F. Romero, A. Jimenez, J. Miguel-Sanchez, A. F. Brana, F. Gonzalez-Posada, R. Cuerdo, F. Calle, and E. Munoz, “Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT,” IEEE Electron Device Lett., vol. 29, no. 3, Mar. 2008.
[22] Q. Feng, Y. Hao and Y. Z. Yue, “The reduction of gate leakage of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors by N2 plasma pretreatment,” Semicond. Sci. Technol., 2009.
[23] X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma, “ Study of gate oxide traps in HfO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method,” Appl. Phys. Lett., 2013.
[24] Y. Q. Wu, T. Shen, and P. D. Y, G. D. Wilk, “Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures,” Appl. Phys. Lett., 2007
[25] S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-Grown AlN Passivation forAlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges,” IEEE Electron Device Lett., vol. 34, no. 2, Feb.2013.
[26] Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, “Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator,” Appl. Phys. Lett., 2009
[27] D. Jin and Jesus A. del Alamo, “Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs,” in Proc. IEEE Int. Symp. Power Semicond. Devices ICs., June 2012.
[28] S. Ganguly, A. Konar, Z. Hu, H. Xing, and D. Jena, “Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors,” Appl. Phys. Lett., 2012.
[29] Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Huili Xing, and Debdeep Jena, “Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors,” Appl. Phys. Lett.,2012.
[30] Takashi Mizutani, Hiroyuki Yamada, Shigeru Kishimoto, and Fumihiko Nakamura, “Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer,” Jpn. J. Appl. Phys, 2013.
[31] M. Akazawa, M. Chiba, “Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN,” Appl. Phys. Lett., 2013.
[32] Taku Sato, Junich Okayasu, Masahiko Takikawa, “AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very
High-k Oxynitride TaOxNy Gate Dielectric,” IEEE Electron Device Lett., vol. 34, no. 3, Mar. 2013.
[33] C.Chen, X. Liu, B. Tian, P. Shu, Y. Chen, W. Zhang, H. Jiang, and Y. Li, “ Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated Al 2O3 as Gate Dielectrics,” IEEE Electron Device Lett., vol. 32, no. 10, Oct 2011
[34] Zhi Hong Liu, Geok Ing Ng, Ye Kyaw Thu Maung, Khoon Leng Teo, Siew Chuen Foo, Vicknesh Sahmuganathan, Tao Xu, and Chee How Lee, “High Microwave-Noise Performance of AlGaN/GaN MIS-HEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD,” IEEE Electron Device Lett., vol. 31, no. 2, Feb.2010.
[35] P. D. Ye,B. Yang, K. K. Ng, J. Bude, G. D. Wilk et al., “GaN meta l-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric,” Appl. Phys. Lett., 2005.
[36] M. Faqir, G. Verzellesi, F. Danesin , G. Meneghesso, E. Zanoni., “Mechanisms of RF
Current Collapse in AlGaN–GaN High Electron Mobility Transistors,” IEEE Trans. Device Mater. Reliab., vol. 8, no. 2, June 2008.

指導教授

辛裕明(Yue-ming Hsin)

審核日期

2013-8-26

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