| DC 欄位 |
值 |
語言 |
| DC.contributor | 機械工程學系 | zh_TW |
| DC.creator | 范哲銘 | zh_TW |
| DC.creator | ju-ming Fan | en_US |
| dc.date.accessioned | 2013-6-24T07:39:07Z | |
| dc.date.available | 2013-6-24T07:39:07Z | |
| dc.date.issued | 2013 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=100323023 | |
| dc.contributor.department | 機械工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在半導體產業中，SOI的發展解決了傳統矽材的問題，提昇了固態元件的效率和降低能量損耗，而通常是利用智切法來製作SOI材料。在智切法的步驟中，我們將離子佈植的步驟，改用Ion Shower設備來替代一般的Ion Beam，發現了共同佈植而造成雜質一起植入矽晶圓的問題。
本研究目的在於，利用Ion Shower設備來進行氫離子佈植。實驗過程中因為此設備無質譜儀，所以佈植時將不同的元素共同佈植進入了矽材裡。為了避免共同佈植，我們在晶圓上沉積了一層多晶矽層，利用此結構來阻擋氫以外的元素進入矽層裡。之後再以CMP的方式把多晶矽層移除。 | zh_TW |
| dc.description.abstract | In the semiconductor industry, the development of silicon on insulator (SOI) solves the happened problems, and improves the efficiency of solid state devices and reduces the loss of energy.It is usually using Smart-Cut to produce SOI.In Smart-Cut steps, The ion implantation step to switch the Ion Shower devices to replace the Ion Beam, found the co-implanted with impurities implanted silicon wafer.
This study is about the Ion Shower devices to hydrogen ion implantation. No mass spectrometer during the experiment in this devices, implant the different elements co-implanted into the silicon wafer.In order to avoid co-implanted,layer of polysilicon layer is deposited on the wafer, with this structure to the barrier element other than hydrogen into the silicon layer inside. After polysilicon layer removed by CMP.
| en_US |
| DC.subject | 多晶矽 | zh_TW |
| DC.subject | 阻擋 | zh_TW |
| DC.title | 多晶矽阻擋層阻擋離子佈植雜質之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | nono | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |