| dc.description.abstract | 在本研究中主要是探討RTP硒化法中的硒蒸氣壓對於Cu(Inx,Ga1-x)Se2薄膜的影響，Cu(Inx,Ga1-x)Se2薄膜的製備上將採用兩階段RTP金屬前驅物層硒化法，在金屬前驅物是採用CIG三元靶，使用DC Sputtering Module製備，其靶材Cu:In:Ga的比例為42:44:16 wt%。
在Se/CIG的堆疊結構方面，有改變其厚度的兩種結構堆疊，第一種堆疊結構為Se(1.8μm)/CIG(650nm)，第二種結構為Se(3.7μm)/CIG(1.3μm)，而在硒化壓力方面，在第一種堆疊中有三種硒的蒸氣壓力分別為23 Pa、495 Pa以及1.45×104 Pa，在第二種堆疊中硒的壓力分別為48 Pa、1021 Pa以及1.45×104 Pa。根據第一個結構的實驗我們可以得知當硒化壓力越大時，其Grain Size越大，CIGS薄膜品質越好。雖然在第二種堆疊中，對於硒壓力的增加，可以得到與第一種堆疊相同的現象，但是由於1.45×104 Pa壓力下製作出來的Cu(Inx,Ga1-x)Se2會剝落且MoSe2會過厚(~2μm)，在先前的實驗中得知，如果MoSe2過厚將會影響Cu(Inx,Ga1-x)Se2薄膜，使其剝落。因此，故多製作一洩氣孔的模組，使過量的硒蒸氣壓釋放，降低MoSe2的厚度與薄膜剝落的現象。
其經由不同硒化壓力下製備出來的Cu(Inx,Ga1-x)Se2薄膜，都將會以XRD、EDS以及FESEM進行量測分析。其分析結果洩氣孔的模組所製備的Cu(Inx,Ga1-x)Se2薄膜，晶粒較大，MoSe2較薄，其薄膜品質較好。在本實驗中經由效率量測可以得知，由第二種堆疊結構Se(3.7μm)/CIG(1.3μm)經洩氣孔模組，所製備的Cu(Inx,Ga1-x)Se2薄膜相較其他樣品，在不同硒壓力下堆疊製元件後，為其最高其效率5.2%。 | zh_TW |
| dc.description.abstract | In this study, it was mainly discussed the effect of selenium vapor to Cu(Inx,Ga1-x)Se2 thin film by using precursor-rapid thermal process (RTP) Selenization two-step method. The metallic precursors were formed by direct current (DC) magnetron sputtering system using CuInGa ternary alloy target with a composition ratio of Cu:In:Ga of 42:44:16 wt%.
The structure of Se/CIG had two types under different thickness in each layers. The first structure was Se(1.8μm)/CIG(650nm); The second structure was Se(3.7μm)/CIG(1.3μm). The first structure used different selenium vapor under 23 Pa, 495 Pa and 1.45×104 Pa during selenization process, respectively. The second structure used different selenium vapor under 48 Pa, 1021 Pa and 1.45×104 Pa during selenization process, separately.
Based on the experiment of first structure, the grain size would be larger and the quality of Cu(Inx,Ga1-x)Se2 thin film would be better with increasing selenium vapor. Although we could also find the same phenomenon in the second structure of Cu(Inx,Ga1-x)Se2 thin film with increasing Se vapor, the Cu(Inx,Ga1-x)Se2 thin film would be peeled off and MoSe2 thickness (~2μm) would be increased dramatically at 1.45×104 Pa. In the previous studies, if the thickness of MoSe2 was too thick that would influence Cu(Inx,Ga1-x)Se2 thin film to be peeled. Therefore, we used a pressure released vent module to leak over high selenium vapor for avoiding the peeling and decreasing the thickness of MoSe2 thin film.
The CIGS thin films were measured by X-ray diffraction (XRD), Energy dispersive spectrometer (EDS), Field-emission scanning electron microscopy (FESEM) and Solar simulation. To analyze Cu(Inx,Ga1-x)Se2 thin film in the pressure released vent module, it was found that the grain size of film was larger, the thickness of MoSe2 was thinner and the quality of Cu(Inx,Ga1-x)Se2 film was better when compared to other Cu(Inx,Ga1-x)Se2 film under different selenium pressures. Based on the measurement of solar simulation, the best efficiency 5.2% was obtained in the second structure sample of the pressure released vent module under selenization process. | en_US |