| dc.description.abstract | MOCVD is one of the most important equipment and widely used for the epitaxial growth of LED wafers. The key component “gas injection system” was sent the gas into the reactor by using the nozzle or the showerhead .which happen chemical reaction and gas mixing .In this paper ,we use the computer simulation (Fluent) method to investigate the VEECO E300 chamber’s thermal flow and design the new gas injection system. The numerical parameter will involve the inlet flow rate ,the chamber pressure, the susceptor rotation rate ,the wall temperature ,the distance between inlet and susceptor ,outlet location, outlet degree ,we use the dimensionless number(Re, Gr, Rew) to realize the mechanism between the force convection and the natural convection, then improve the flow uniformity, beside, we also compare with paper to define the ture model.
According to this basic thermal flow model for ,we design the “inlet barrier” under the gas injection system, inlet barrier can obstruct the different reaction gas ,reduce the pre-reaction and deposit particle on the wall. the numerical parameter are the barrier length ,the barrier geometry, the barrier incline degree, and the V/III precursor ratio, it is found that the increase of the barrier’s length has reduce the small recirculation between the barrier, the best barrier design(barrier incline degree 35∘) not only increases the growth rate ,but also improves the concentration uniformity, we proved that the barrier really decreases the MO gase’s usage. | en_US |