| dc.description.abstract | Solar energy generation is a green industry, but it consumes a lot of resources in the manufacturing process. The literatures has mentioned to cut silicon wafers by using Wire EDM in recent years. Compared to the chemical insulation of the edge of silicon, the edge of silicon by using Wire cut Electrical Discharge Machining. It reduces chemical liquid of the manufacturing process and the cracks of wafer edge.
This paper is divided into two parts . The first section is after the completion of phosphorus diffusion process of Solar cell, the pure water as processing liquid, the implementation of the edge of silicon by using Wire cut Electrical Discharge Machining (Negative plating on P-type silicon wafer).Machining voltage, processing speed as the machining parameters, and the high-resolution electron spectrometer is used to detect the insulating effect after processing. The second is to observe the surface of the machined surface roughness. The traditional wafer dicing using piano wire for cutting. Stress generated during processing of the wafer will destroy the edge of cracks. WEDM can improve the shortcomings of processing, Thereby reducing the edge cracks of wafer
Experiments results show that used the negative electrode EDM cutting mode, upper titration of 12cc per minute and machining voltage,30V, the N layer can be removed effectively.
Surface roughness decreased from 0.6μm to 0.365μm. Improve efficiency of 40% achieved. Compared to the pure water, add 0.6g per liter of pure water silicon carbide as a Machining fluid, the surface roughness can be reduced to 0.304μm and 15% improvement efficiency.
Keyword：Wire cut Electrical Discharge Machining、Polysilicon、Crystal edge insulation、Silicon carbide
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