| dc.description.abstract | This thesis discusses design of high power and high efficiency power devices for radio frequency, microwave and millimeter-wave (MMW) applications. The circuits are designed using laterally diffused metal oxide semiconductor (LDMOS) transistors and complementary metal oxide semiconductor (CMOS) process. First, based on the conventional class-E topology with reactance compensation technique, a few broadband power amplifiers and injection-locked oscillators are presented, using Freescale LDMOS transistors. The proposed circuits feature broadband, high efficiency and high power.
A Q-band high efficiency cascode voltage controlled oscillator (VCO) using TSMC 90 nm LP CMOS process is presented in Chapter 3. To achieve both high power and high efficiency output, the cascode topology with π-feedback network is employed in the design. The proposed VCO exhibits a maximum output power of 10.4 dBm, and a maximum efficiency of 16.1%. The tuning frequency is from 43.8 to 49.1 GHz. Also the Q-enhancement circuit is introduced to improve the phase noise performance. The phase noise is -104.63 dBc/Hz at 1-MHz offset.
A V-band phase locked-loop (PLL) using TSMC LP 90 nm CMOS process is presented in Chapter 4. Based on the cascode VCO topology, an innovative differential cascode VCO is proposed for the V-band PLL. To ensure the differential operation for the cascode VCO, the even- and odd-mode analysis is adopted in the circuit design. Moreover, the output phase noise and jitter of the differential VCO can be significantly reduced using the PLL with the low phase noise reference. The measured output power is higher than 7 dBm, over the bandwidth with a dc-to-RF efficiency of 2.2%. The phase noise is -86.5 dBc/Hz at 1 MHz offset with a rms jitter of 307 fs.
Finally, the conclusion is summarized in Chapter 5. | en_US |