博碩士論文 101296001 完整後設資料紀錄

DC 欄位 語言
DC.contributor光電科學與工程學系zh_TW
DC.creator林正軒zh_TW
DC.creatorCheng-hsuan Linen_US
dc.date.accessioned2014-7-30T07:39:07Z
dc.date.available2014-7-30T07:39:07Z
dc.date.issued2014
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=101296001
dc.contributor.department光電科學與工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract將太陽光轉換成電能的太陽能電池,是二十一世紀面對能源危機,尋找替代能源中相當重要的研究方向。光電轉換的技術有許多不同方式,有光伏元件(photovoltaic cells)、整流天線(rectenna, rectifying antenna)等。本論文主要研究由整流天線改良的金屬-絕緣層-金屬(Metal-Insulator-Metal , MIM)結構,此結構可以直接轉換可見光波長的能量。   MIM表面電漿結構的光電轉換,主要利用表電漿耦合機制與熱載子穿隧效應兩種方式。其中,隨著近年來奈米技術的純熟,極薄的膜層(<15 nm)都可以被實現後,由MIM結構各層厚度所決定的熱載子穿隧位能障壁已可自由調整。在產生表面電漿的偶合機制上,傳統的菱鏡耦合法對於入射光有特定角度的限制;而對於結構式二維光柵結構MIM元件,雖突破了入射光特定角度了限制條件,但又發現若要產生表面電漿共振,其結構對於入射光的偏振態有所篩選。   綜合以上種種限制條件,本論文題出了三維結構的構思:我們利用陽極氧化鋁法製作了二維的奈米孔洞膜板後,結合自我複製式成膜技術設計並完成了三維MIM表面電漿元件。根據量測結果,除了成功觀察到表面電漿的吸收光譜可在可見光波段的高頻區外,此結構也成功突破特定角度、特定偏振的限制;相比於稜鏡耦合法的平板MIM元件,此研究成果大大縮小了整體元件大小;而且在光電轉換的效率上,相比與結構式的二維MIM元件更超過了一個數量級。其中,我們更發現此三維MIM表面電漿結構對應不同的入射光波長時可產生不同強度光電流的特殊現象。 zh_TW
dc.description.abstractThere are several techniques can transit solar energy as electrical energy, such as solar cell, photodiode or rectenna. Based on the surface plasmonic effect and the hot carrier transportation, the metal-insulator-metal device (MIM) was employed to convert the solar spectrum from the ranges of visible light to infrared region in this study. In this research, the MIM device was fabricated on an anodic aluminum oxide (AAO) template. The uniform pore size and period of the AAO can be achieved by using the multi-electrolyte-step process. The auto-cloning technique was applied to achieve the three-dimensional MIM. Besides, the Finite Difference Time Domain (FDTD) method was used to simulate the properties the three-dimensional device and realize its plasmonic effect. Finally, the power conversion efficiency (PCE) 1.34E-03 % of the three-dimensional MIM was achieved under an AM 1.5 solar simulator. And we find the photocurrent of the MIM device is corresponding to the wavelength of the incident light. en_US
DC.subject金屬-絕緣層-金屬zh_TW
DC.subject表面電漿元件zh_TW
DC.subject陽極氧化鋁zh_TW
DC.subject換酸製程zh_TW
DC.subject自我複製技術zh_TW
DC.subjectMetal-Insulator-Metal (MIM)en_US
DC.subjectanodic aluminum oxide (AAO)en_US
DC.subjectmulti-electrolyte-step process (MES)en_US
DC.subjectAuto-cloning techniqueen_US
DC.subjectFinite Difference Time Domain (FDTD)en_US
DC.title三維表面電漿元件光電轉換特性之研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleThree Dimensional Surface Plasmon Resonance Device for the Application of Optoelectronic Transformationen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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