博碩士論文 101323109 完整後設資料紀錄

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DC.contributor機械工程學系zh_TW
DC.creator黃柏欽zh_TW
DC.creatorBo-qin Huangen_US
dc.date.accessioned2014-7-31T07:39:07Z
dc.date.available2014-7-31T07:39:07Z
dc.date.issued2014
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=101323109
dc.contributor.department機械工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本研究使用直流磁控濺鍍製程在不同的氧流量參數下鍍製三氧化鎢薄膜。在濺鍍過程中,使用電漿探針、光發射光譜儀(OES)與質譜儀監控整個電漿製程。透過電漿量測參數與靶材電壓的變化情形,可發現在低氧流量(5 sccm)時,所鍍製的氧化鎢薄膜偏金屬態,隨著氧流量的增加(10-20 sccm),逐漸變成非晶的三氧化鎢薄膜。濺鍍後的氧化鎢薄膜接著使用X光繞射儀(XRD)、掃描式電子顯微鏡(SEM)、能量散射儀(EDS)、光電子能譜儀(XPS)、UV-VIS分光光譜儀及橢圓儀,做薄膜結構、化學成分及光學分析。最後是電致變色的功能測試,採用電化學方法,使鋰離子(Li+)與電子進出氧化鎢薄膜而達到變色與透明的效果,並以定電位量測及循環伏安法作為電致變色的定量分析,藉由材料分析與電化學測試的結果發現氧化鎢薄膜在接近它的化學劑量比例時,有較佳的電致變色效果。zh_TW
dc.description.abstractTungsten oxide film under different oxygen flow rates are deposited by DC sputtering. The deposition process is monitored by the Langmuir probe, optical emission spectrometer and mass spectrometer. From the voltage change at target and all plasma parameters, we found low oxygen flow rate (5 sccm) only creates metal-rich tungsten oxides films, while higher oxygen flow rate (10 -20 sccm) assures the deposition of amorphous WO3 films. The analyses for the deposited films by XRD, SEM, EDS, XPS and UV-Vis-NIR spectroscopy and ellipsometry also confirm the above claim. To explore the electrochromic function of WO3 films, we choose films deposited under 10 sccm for electrochemical insertion of ions (Li+) and electrons. The WO3 films successfully demonstrated the switch between color and bleach states by both pontetiostat and cyclic voltammetry. Quantitative evaluation on electrochemical tests indicates that WO3 film with composition close to its stoichiometry is an optimal choice for electrochormic function.en_US
DC.subject非晶氧化鎢薄膜zh_TW
DC.subject電漿探針zh_TW
DC.subject光發射光譜儀(OES)zh_TW
DC.subject電漿診斷zh_TW
DC.subjectamorphous tungsten oxide filmen_US
DC.subjectLangmuir probeen_US
DC.subjectOESen_US
DC.subjectplasma diagnosticsen_US
DC.titleThe Deposition and Microstructure of Tungsten Oxide Films by Physical Vapor Depositionen_US
dc.language.isoen_USen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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