| DC 欄位 |
值 |
語言 |
| DC.contributor | 機械工程學系 | zh_TW |
| DC.creator | 謝育霖 | zh_TW |
| DC.creator | Yu-Lin Hsieh | en_US |
| dc.date.accessioned | 2018-8-24T07:39:07Z | |
| dc.date.available | 2018-8-24T07:39:07Z | |
| dc.date.issued | 2018 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=101383003 | |
| dc.contributor.department | 機械工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本研究以硬體設備為出發點實際運用電漿診斷工具光放射光譜儀(OES)與四極柱質譜儀(QMS)進行PECVD機台硬體測試、製程開發與優化，從無到有建構一套完整的PECVD鍍膜系統。
在硬體測試方面，首先透過監測不同流量與壓力下之控壓閥開合角度變化，確認製程流量與壓力之對應下限。再利用OES進行Ar電漿放光測試，了解機台電極間距對RF功率吸收之變化趨勢，最後配合電漿診斷工具之操作區間定義出本PECVD系統目標製程開發區間。
在製程開發方面，在5nm超薄本質鈍化層製程再現性優化過程中，經電漿診斷與薄膜分析後發現，前次製程殘留之交叉汙染現象與腔壁殘存水氣為影響超薄本質鈍化層再現性之主因。
根據分析結果，分別以清腔製程OES光譜氟氧比之光強(F*/O*=0.9~1.4)為清腔製程終點與預鍍製程累積鍍膜厚度需達到1800nm以上兩條件做為標準，建立一套穩定產出5nm超薄鈍化薄膜lifetime穩定達到~800us之方法供本研究團隊使用。
接著透過調整預鍍參數大幅縮短產出高品質之超薄鈍化薄膜之準備時間。最後透過堆疊10nm磷化氫摻雜薄膜與5nm本質鈍化薄膜，達到場效鈍化lifetime1900μs之水準。驗證本自行開發之PECVD系統之製程能力。 | zh_TW |
| dc.description.abstract | In this study, using hardware equipment as the starting point, the in situ plasma diagnostic systems of optical emission spectrometry (OES) and quadrupole mass spectrometry (QMS) was used to improve the hardware and process of PECVD machine, and a complete PECVD system was constructed from scratch.
In terms of hardware testing, firstly, by monitoring the change of angle of the pressure control valve under different flow rates and pressures, the corresponding lower limit of the process flow and pressure is confirmed. Then use OES to perform an Ar plasma discharge test to understand the change trend of the electrode spacing of the machine to the RF power absorption. Finally, the development of target process window of the PECVD system is defined by the operation interval of the plasma diagnostic tool.
In terms of process development, in the process of optimizing the process reproducibility of the ~5nm ultra-thin intrinsic passivation layer, after plasma diagnosis and thin film analysis, it was found that the cross-contamination phenomenon of the previous process residue and the residual moisture of the chamber wall are the main factors affecting the reproducibility of the ultra-thin intrinsic passivation layer.
According to the analysis results, the OES intensity of the clear process (F*/O*=0.9~1.4) is taken as the standard for the end-point of the chamber cleaning process, and the chamber coating thickness of the predeposition process needs to reach 1800 nm or above. A method for stably producing high-quality 5nm ultra-thin passivation film (minority carrier lifetime stable up to ~800us) was established for use by the research team.Then, by adjusting the predeposition parameters, the preparation time for producing a high-quality ultra-thin passivation film is greatly shortened. Finally, by stacking a 10 nm phosphide doped film and a 5 nm intrinsic passivation film, the field effect passivation lifetime 1900μs is achieved. Verify the process capability of this self-developed PECVD system. | en_US |
| DC.subject | 光放射光譜 | zh_TW |
| DC.subject | 四極柱質譜 | zh_TW |
| DC.subject | 鈍化層 | zh_TW |
| DC.subject | optical emission spectrometry (OES) | en_US |
| DC.subject | quadrupole mass spectrometry (QMS) | en_US |
| DC.subject | passivation | en_US |
| DC.title | 以電漿診斷工具進行太陽電池用矽薄膜製程開發 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Development of silicon thin film process for solar cells with plasma diagnostic tools | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |