| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 李池昱 | zh_TW |
| DC.creator | Chi-Yu Li | en_US |
| dc.date.accessioned | 2014-8-19T07:39:07Z | |
| dc.date.available | 2014-8-19T07:39:07Z | |
| dc.date.issued | 2014 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=101521031 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 我們已經成功作出了新型以磷化銦為基材光檢測器的詳細特性與分析。這個元件可維持穩定的外部量子效應(~74%，無抗反射層 )且操作波長在0.85μm到1.55μm下可以清楚地發現資料傳輸高達40 Gbit/sec且清楚的看到眼圖(無誤碼）。此外,和以砷化鎵為基材的光檢測器相比, 以相同速度操作在850nm波段下, 由於P型In0.53Ga0.47As作為吸收層的電洞傳輸會被消除以及極佳的電子傳輸特性,，我們能以較大的主動區直徑來達到相同的元件速度。 藉由不同主動直徑的光檢測器的量測和模擬結果明確指出,在In0.53Ga0.47As空乏層,因為輕微的電子谷間散射導致操作在1.55μm的電子飄移速度會比在0.85μm的時候要來得快(1.9 vs. 1.5×105 m/sec) 。 然而，操作在長波段有電洞傳輸慢的現象,會造成載子傳輸時間隨光電流的增加而衰減。 分別操作在短波長和長波長下,我們藉由多模光纖和單模光纖以40μm的主動區直徑達到 40Gbit/sec的無誤碼傳輸。 | zh_TW |
| dc.description.abstract | The detail characterizations and analysis of novel high-speed InP based photodiodes have been performed. Such device can sustain an invariable high external efficiency (~74 %; without anti-reflection coating) and have clear eye-openings at around 40 Gbit/s operation across a wide optical operation window (0.85μm to 1.55μm). Furthermore, as compared to that of GaAs based PDs for the same desired speed performance at 850 nm optical wavelength, it can have an enlarged device active diameter due to the elimination of hole transport and excellent electron transport characteristic in the In0.53Ga0.47As based collector layer. The measurement and modeling results of PDs with different active diameters clearly indicate that compared with short-wavelength (0.85μm) operation, the electron drift-velocity in the depleted In0.53Ga0.47As layer is faster (1.9 vs. 1.5×105 m/sec) under long wavelength (1.55μm) excitation, which can be attributed to less significant electron inter-valley scattering effect. Nevertheless, due to existence of slow hole transportation at long-wavelength operation, our PD shows more significant degradation in transient time limited bandwidth when the output photocurrent increases. By using such device with diameter of optical window as large as 40μm, 40 Gbit/sec error-free transmissions have been successfully demonstrated through single-mode and multi-mode fibers at long- and short-wavelengths operations, respectively. | en_US |
| DC.subject | pin光檢測器 | zh_TW |
| DC.title | 以磷化銦為基材,應用於850nm波段且具有高速(>25Gbit/sec),高效率大主動區孔徑的pin光檢測器之設計和分析 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Design and Analysis of InP Photodiode with , High speed , High-Efficiency, and Large Active Diameter for the Application of >25Gbit/sec Optical Interconnect at 850nm Optical Wavelength | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |