| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 周孟誠 | zh_TW |
| DC.creator | Meng-Cheng Chou | en_US |
| dc.date.accessioned | 2017-7-6T07:39:07Z | |
| dc.date.available | 2017-7-6T07:39:07Z | |
| dc.date.issued | 2017 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=102226002 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在本研究中，我們利用奈米球鏡微影術(nanosphere-lens lithography )與二次蝕刻技術製作氮化鎵(GaN)發光二極體(LED)奈米柱(nanorod)陣列。奈米球鏡微影術能以低成本的方式製作大面積的奈米結構陣列，不需要使用昂貴的電子束微影製程(E-beam Lithography)、極紫外線(Extreme Ultraviolet, EUV)的黃光微影製程。除了成本低廉之外，許多研究團隊發現奈米結構會影響氮化鎵發光二極體的光電特性，例如偏振方向，奈米柱的幾何形狀與量子井發光的偏振方向有密切的關係。 | zh_TW |
| dc.description.abstract | Gallium nitride (GaN) nano-rod light emitting diodes (LEDs) have been an attractive research topic because of their enhanced light extraction efficiencies and other unique electro-optical properties. In this project, we fabricate GaN nano-rod LED arrays with nanosphere-lens lithography (NLL) and a two-step etching technique. The NLL technology is a low-cost approach to fabricate large-area nanostructure arrays, without resorting to expensive facilities, e.g. e-beam lithography and extreme ultraviolet (EUV) lithography process. | en_US |
| DC.subject | 光電元件 | zh_TW |
| DC.subject | 奈米球 | zh_TW |
| DC.subject | 奈米球鏡微影術 | zh_TW |
| DC.title | 奈米球鏡微影術應用於奈米光電元件之研製 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Fabrication of Nanoscale Optoelectronics Devices using Nanospherical-Lens Lithography | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |