博碩士論文 102323024 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	機械工程學系	zh_TW
DC.creator	楊東穎	zh_TW
DC.creator	Yang Dongying	en_US
dc.date.accessioned	2015-6-23T07:39:07Z
dc.date.available	2015-6-23T07:39:07Z
dc.date.issued	2015
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=102323024
dc.contributor.department	機械工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本研究目標為將N型矽晶材料輔以紫外光蝕刻做出多孔矽層，製作出適用於太陽能電池之材料。目前在太陽能電池中，製作種類可分為單晶矽、多晶矽以及非晶矽，其中更以單晶矽的轉換效率最佳，在實驗過程中嘗試以加熱再結晶的方法使多孔矽表面形成一層單晶矽層。因傳統爐管加熱方式所耗費時間較長，故本實驗施以兩種不同加熱方式使他表面產生晶體再結晶，藉由儀器檢測比較不同加熱方式造成的表面結晶品質的差異，在蝕刻時的參數包含時間、濃度、電流、光照以及熱處理時的溫度、時間、環境氣氛，由參數的改變與設定製作出多孔矽材料，再藉由X光繞射去檢測不同數據下晶體結晶的品質，以利往後依需求不同而選取適合的參數及加熱方式。	zh_TW
dc.description.abstract	The aim of this research is to make porous silicon layer on a n-type silicon wafer with the exposure of UV light,which could be used as a kind of solar cell material. Silicon based materiad that can be used in solar cell can be seprate as single crystalline ,polysilicon ,and amorphous silicon , in which single crystal silicon solar cell has best efficiency .In this experiment, we try to make a single crystal layer on the surface of the silicon wafer with the method of thermal annealing . Because of the long time that traditional method cost, we use two different ways to recrystallize the wafer surface and then study the quality difference after two kinds of treatment. The experiment parameters includes time, concentration, illumination, and the temperature, time and environment during anealling. We made difference porous silicon wafers by controlling experiment parameters , and test the quality under different conditions. All these work can be a data base for future work.	en_US
DC.subject	熱處理對N型多孔矽表面燒結之研究	zh_TW
DC.title	熱處理對N型多孔矽表面燒結之研究	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Effect of annealing on sintering surface of N-type porous silicon	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US