| dc.description.abstract | In this study, the low temperature growth epitaxy silicon (epi-Si) thin films was prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). ECR-CVD had many advantages, such as faster deposition rate, no electrode contamination and low ion bombardment. However, unstable process was easy to cause experimental error. We analyzed process parameters to find out how it affects the deposition and crystal rate of the thin film. We also analyzed chamber environments to find out how it affects the process stability. The process parameters effect of epi-Si thin films such as dilution ratio, process pressure, microwave power, main magnetic field position, substrate temperature, thickness of thin film, different substrates and different way to clean the substrates were investigated. The chamber environments effect of process stability such as pre-coating time, the lowest pressure of chamber and the plasma chamber cleaning were investigated. The thin films and plasma were analyzed by optical emission spectroscopy, ellipsometer, Raman spectroscopy, X-ray diffractometer and TEM.
Finally, to keep a stable process chamber, we needed to pay attention to chamber cleaning, suitable pre-coating time, substrate type and the way of substrate cleaning. We used optical emission spectroscopy to diagnose the plasma and to made sure it is stable. The experiment results showed that appropriate dilution ratio, high process pressure, low microwave power and high substrate temperature had higher crystal rate. We used optical emission spectroscopy to measure the intensity of SiH* and calculated the epi-Si thin film deposition rate. It could save the time and steps of experiment.
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