博碩士論文 102323063 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	機械工程學系	zh_TW
DC.creator	房子陽	zh_TW
DC.creator	Zih-Yang Fang	en_US
dc.date.accessioned	2015-7-15T07:39:07Z
dc.date.available	2015-7-15T07:39:07Z
dc.date.issued	2015
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=102323063
dc.contributor.department	機械工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	有機金屬化學氣相沉積法（Metal–Organic Chemical Vapor Deposition, MOCVD）為目前製作LED最重要的技術之一，各家廠商使用不同的進氣方式與腔體設計使得腔體中可以有均勻的熱流場，形成良好的薄膜成長情形。本研究採用COMSOL模擬軟體進行分析與設計，研究內容主要分為兩個部分，第一個部分為改善Veeco垂直式的進氣腔體中氣體利用率不佳的問題，透過三角導流板(triangular barrier)與水平出氣口的設計提升載盤上的平均薄膜成長速率、均勻性以及均勻面積，使得Veeco腔體可以有更佳的氣體利用率。第二部分為改善Aixtron水平式進氣腔體中自旋機構因顆粒堆積造成穩定性不足需要停機維修的情形，透過H2 / TMG進氣口檔板、斜面邊壁設計以及弧面邊壁設計，使得Aixtron腔體在不需自旋機構的情況下，可以擁有好的平均薄膜成長速率、均勻性以及較大均勻面積。	zh_TW
dc.description.abstract	Metal–Organic Chemical Vapor Deposition, MOCVD, is one of the most important technologies to manufacture the LED. There are different methods to get uniform thermal-flow field providing good conditions of thin film deposition in different manufacturer. In this study, the numerical method was applied to analyze and design the MOCVD system. In first part, the new design of triangular barrier and horizontal outlet which can enhance the average growth rate, uniformity, and uniform region on the susceptor to improve the problem of the low gas-usage in Veeco system are proposed. In the second part, the new design of the barrier in the group Ⅲ inlet, incline wall and curve wall are proposed to obtain uniform thin film deposition without the wafer spin.	en_US
DC.subject	化學氣相沉積	zh_TW
DC.subject	進氣設計	zh_TW
DC.subject	數值模擬	zh_TW
DC.subject	MOCVD reactor	en_US
DC.subject	simulation	en_US
DC.subject	inlet design	en_US
DC.title	MOCVD創新進氣系統設計模擬分析	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US