博碩士論文 102324054 完整後設資料紀錄

DC 欄位 語言
DC.contributor化學工程與材料工程學系zh_TW
DC.creator許瀚文zh_TW
DC.creatorHan-wen Hsuen_US
dc.date.accessioned2015-7-27T07:39:07Z
dc.date.available2015-7-27T07:39:07Z
dc.date.issued2015
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=102324054
dc.contributor.department化學工程與材料工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本研究使用噴塗(spray-coating)技術沉積 poly[(9,9-dioctylfluorenyl-2,7 -diyl)-co-bithiophene] (F8T2)共軛高分子、6,13-bis(triisopropylsilylethynyl) -pentacene (TIPS-PEN)有機小分子以及poly-(selenophene-alt-3,6-dithophene -2-yl-2,5-bis-(2-hexyldecyl)-2,5-dihydro-pyrrolo[3,4-c]pyrrole-1,4-dione) (PSeDPP)共軛高分子作為有機半導體材料,製作於以矽烷(silane)處理過之SiO2/Si基板上,再以蒸鍍金作為電極,建構為底閘極頂接觸(bottom-gate top-contact)之有機場效應電晶體元件(organic field effect transistors; OFETs)。根據改變不同的噴塗參數(如噴塗壓力、流量、噴塗距離及噴塗時間等)及以不同親水性之矽烷處理或製作圖案化矽烷於基材上,用以探討其對半導體薄膜表面形態和電氣特性影響。經由選用最佳化參數所製作之元件,P型半導體F8T2與TIPS-PEN分別可達電洞遷移率(hole mobility)為0.02 cm2 V-1 s-1和1.18 cm2 V-1 s-1;雙極性半導體PSeDPP可同時達5 cm2 V-1 s-1及1.13 cm2 V-1 s-1之電洞遷移率和電子遷移率(electron mobility),並皆有超過102之電流開關比(Ion/Ioff)。最後使用噴塗法試產大面積圖案化元件陣列,在8 × 8共64個元件中有超過93%的元件可正常工作,替快速製作大面積微米級圖案化元件陣列提供了一種新的製程方法。zh_TW
dc.description.abstractSpray-coated organic semiconductors such as conjugated polymer of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene] (F8T2), small molecular of 6,13-bis(triisopropyl-silylethynyl)-pentacene (TIPS-PEN) and conjugated polymer of (selenophene-alt-3,6-dithophene-2-yl-2,5-bis-(2-hexyldecyl)-2,5 -dihydro-pyrrolo[3,4-c]pyrrole-1,4-dione) (PSeDPP) were constructed as organic field effect transistors (OFETs) on SiO2/Si substrate treated with various silanes or patterned silanes. The spray parameters and silanes selected were examined and corresponding morphologies of each organic semiconductors thin-film were systematically investigated while the OFETs were fabricated and characterized. After optimizing the condition used, F8T2 and TIPS-PEN could achieve hole mobility of 0.02 cm2 V-1 s-1 and 1.18 cm2 V-1 s-1 while PSeDPP could achieve hole and electron mobility of 5 cm2 V-1 s-1 and 1.13 cm2 V-1 s-1 simultaneously with on off current ratio of more than 102. Patterned OFETs array composed of 8 × 8 device layout on 4-inch Si wafer was also demonstrated with spray-coating approach and the percentage of devices worked successfully is exceeding 93%. As the result, the spray-coating process provides a new technique for fast manufacturing OFETs array in large-scale and compatible with the roll-to-roll process.en_US
DC.subject噴塗zh_TW
DC.subject有機場效應電晶體zh_TW
DC.subject有機薄膜電晶體zh_TW
DC.subject共軛高分子半導體zh_TW
DC.subject有機小分子半導體zh_TW
DC.subject溶液法製程zh_TW
DC.subjectspray coatingen_US
DC.subjectorganic field effect transistorsen_US
DC.subjectorganic thin film transistorsen_US
DC.subjectconjugated polymersen_US
DC.subjectsmall molecular semiconductorsen_US
DC.subjectsolution processen_US
DC.title以噴塗技術沉積有機半導體薄膜:形貌分析及其於有機場效應電晶體元件應用zh_TW
dc.language.isozh-TWzh-TW
DC.titleSpray Coating Organic Semiconducting Thin Film: Morphology Analysis and Organic Field Effect Transistors Applicationen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明