| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 蕭秉昇 | zh_TW |
| DC.creator | Ping-Sheng Hsiao | en_US |
| dc.date.accessioned | 2015-6-30T07:39:07Z | |
| dc.date.available | 2015-6-30T07:39:07Z | |
| dc.date.issued | 2015 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=102521051 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在本文中，我們開發的真空能階系統，E_0方法，去解決模擬2-D異質結構的半導體元件邊界條件上的問題。在過去，我們的程式是使用本質費米能階，E_fi，以其來計算載子濃度與電位電場情形。然而，E_fi這個方法在2D異質接面上有模擬的問題。所以發展了E_0系統去計算邊界條件並解決問題。而在之後的章節，我們去驗證E_0方法製作出的模型是否可行，藉由pN接面元件與理論討論。並探討陡變接面與漸變接面在模擬上的問題。最後，我們使用的方法E_0，做出HBT並模擬，且著重在能隙寬度對於電壓電流特性的比較。 | zh_TW |
| dc.description.abstract | In this thesis, we develop vacuum level system, E_0 method, for numerical 2-D heterojunction device simulation. In the past, our program use intrinsic Fermi level, E_fi, to calculate carrier concentration and potential. However, the E_fi modeling has problem in heterojunction. The E_0 method has been verified by a pN heterojunction. And discuss problems of simulation happened on abrupt. Finally, we use the E_0 method to compare HBT with BJT to discuss the electrical characteristics. | en_US |
| DC.subject | 異質接面 | zh_TW |
| DC.subject | 網格電路模擬 | zh_TW |
| DC.subject | 半導體 | zh_TW |
| DC.subject | heterojunction | en_US |
| DC.subject | Semiconductor | en_US |
| DC.subject | Simulation | en_US |
| DC.title | 二維異質接面半導體元件之開發與模擬 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Development of 2D Heterojunction Semiconductor Model and Its Applications to Device Simulation | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |