| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 梁瀅龍 | zh_TW |
| DC.creator | Ying-Lung Liang | en_US |
| dc.date.accessioned | 2015-6-30T07:39:07Z | |
| dc.date.available | 2015-6-30T07:39:07Z | |
| dc.date.issued | 2015 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=102521115 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本篇論文中，我們將帕松方程式及電流連續方程式，利用等效電路的方式來設計出二維網格數值元件模擬器，元件的模擬就變成了電路的模擬，不但可以用電路模擬器來做元件模擬，而且可以和一般電路結合，形成混階模擬，接著討論多晶矽閘極和金屬閘極的差異和優缺點，並利用多晶矽閘極模擬的結果和金屬閘極來做比較，最後，我們將討論的主題是用非白努力的電流表示方法，並比較非白努力方程式與傳統白努力方程式上的差異。 | zh_TW |
| dc.description.abstract | In this thesis, we use Poisson’s equation and continuity equations to design an equivalent circuit model for 2-D device simulation. The device simulation will be transformed into the circuit simulation. The simulation will become a mixed-level device and circuit simulation. We discuss the advantages and disadvantages between poly-Si gate and metal gate. And the simulation results of poly-Si gate will be compared with those of metal gate. Finally, the subject to be discussed is the non-Bernoulli equation for current expression. We will compare the Bernoulli method with non-Bernoulli method. | en_US |
| DC.subject | 矩形網格 | zh_TW |
| DC.subject | 元件模擬 | zh_TW |
| DC.subject | 金氧半場效電晶體 | zh_TW |
| DC.subject | rectangular mesh | en_US |
| DC.subject | device simulation | en_US |
| DC.subject | MOSFET | en_US |
| DC.title | 多晶矽和金屬閘極於二維金氧半場效電晶體模擬比較 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Comparison Between Polysilicon and Metal Gate in 2D MOSFET Simulation | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |