| DC 欄位 |
值 |
語言 |
| DC.contributor | 能源工程研究所 | zh_TW |
| DC.creator | 邱裕鈞 | zh_TW |
| DC.creator | YU-CHUN CHIU | en_US |
| dc.date.accessioned | 2016-7-15T07:39:07Z | |
| dc.date.available | 2016-7-15T07:39:07Z | |
| dc.date.issued | 2016 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=103328008 | |
| dc.contributor.department | 能源工程研究所 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在本論文中我們以 SiO 2 球作為蝕刻遮罩，並以感應耦合電漿蝕
刻系統對 ITO 基板進行蝕刻，藉此在 ITO 基板上產生奈微米結構，
再以熱蒸鍍的方式進行 OLED 元件製程，透過此項技術提升 OLED
元件的發光效率。
實驗共分為三個部分，首先，第一部分透過場發射電子顯微鏡以
及四點探針得出最佳的蝕刻深度，再分別以 250nm、300nm、500nm
及 1000nm 的 SiO 2 球製作出不同週期的內取光基板。第二部分以
RSOFT 光學軟體進行光取出的模擬，模擬結果顯示結構週期為 500nm
表現最好，對比平片其光萃取效率增加了 25.5%。第三部分則是將不
同週期結構基板進行 OLED 元件製程並量測，量測結果顯示在低亮
度 1000nits 下對照組的發光效率為 17.97 lm/watt，而內取光基板以週期 250nm 表現最好，其發光效率為 33.43 lm/watt 提升了 86%，在高亮度 3000nits 下對照組的發光效率為 9.98 lm/watt，而結構週期 250nm其發光效率為 22.39 lm/watt 提升 124%。
研究結果顯示對 OLED 元件來說，ITO 基板蝕刻結構週期越小發
光效率提升越高，這是因為在 OLED 內部做結構能縮短兩極間距離
提高內部電場以及增加與有機材料的接觸面積。最後，我們將此技術
應用在大尺寸元件得到相似的提升，未來將有助於實際的應用達到節
約能源的目的。 | zh_TW |
| dc.description.abstract | In this study, we report a novel method to enhance the luminous efficiency of OLED device by using nano- and micro-spheres etching technology.
The experiments of this thesis are divided into three sections. First, we use SEM and Four-Point Probe measurement system to obtain the best etch depth to fabricate four period of ITO patterned substrates (250nm,300nm, 500nm and 1000nm). Next, we simulate the light extraction of OLED devices by Rsoft software, and the results show the best performance is the period of 500nm of patterned substrate which could enhance 25.5% of light extraction efficiency than the flat one. Last, we use those four period of ITO patterned substrates to develop OLED devices and measured the light extraction efficiency of each one.
The measurement results show that the light extraction efficiency of those ITO patterned OLED devices are all higher than the flat one. And the smaller period of the etch structure makes the light extraction efficiency of the OLED devices higher. The luminescence of flat ITO substrate OLED is 17.97 lm/watt and 9.98 lm/watt at 1000nits and 3000nits, respectively. Instead,luminescence of the 250nm ITO patterned OLED device could reach to 33.43 lm/watt (enhanced 86%) and 22.39 lm/watt (enhanced 124%) at 1000nits and 3000nits, respectively. The reason why the light extraction efficiency increased is that the nano- or micro- patterned substrates not only improve the guiding mode of light inside the OLED device but also shorten the distance between both electrodes. Moreover, they increase the contact area with organic material to higher the light extraction efficiency of the OLED device. At last, we process this experiment on a large-size device and get the same result which will contribute to practical applications in the future. | en_US |
| DC.subject | 有機發光二極體 | zh_TW |
| DC.subject | 奈微米球 | zh_TW |
| DC.subject | 光萃取 | zh_TW |
| DC.subject | 發光效率 | zh_TW |
| DC.title | ITO 奈微米週期結構電極提升OLED 元件發光效率之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | The study of Enhance the luminous efficiency of OLED devices by nano-micro structure ITO substrate | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |