| DC 欄位 |
值 |
語言 |
| DC.contributor | 能源工程研究所 | zh_TW |
| DC.creator | 黃建瑄 | zh_TW |
| DC.creator | HUANG,JIAN-SYUAN | en_US |
| dc.date.accessioned | 2017-8-15T07:39:07Z | |
| dc.date.available | 2017-8-15T07:39:07Z | |
| dc.date.issued | 2017 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=103328009 | |
| dc.contributor.department | 能源工程研究所 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 石墨烯為近年來備受展望的材料，具有高導電性、高穿透率及高強度的特性。而製程石墨烯的方法有很多種，其中以高溫化學氣相沉積法最為常見，因其製程之石墨烯較為穩定且品質較好，但因製程時間較長、成本高所以目前無法量產，因此縮短製程時間、大面積製程為現階段研究重要之方向。
本研究使用的為快速升溫系統(rapid thermal process, RTP)，將石墨烯製程時間從180分鐘縮短至40分鐘，使用銅箔作為基板，用高溫1080度退火，並用原子力顯微鏡(atomic force microscope, AFM)及X光繞射儀器(X-ray Diffractometer，XRD)分析得知銅箔呈現單晶(111)且粗糙度大幅下降。利用電子掃描式顯微鏡(Scanning Electron Microscope, SEM)分析未長滿石墨烯之密度。氫氣(H2)對於生長石墨烯之重要性，利用拉曼光譜儀及霍爾量測儀器去分析，成功以1080度退火10分鐘(Ar：1000sccm、H2：20sccm)，生長10分鐘(Ar：1000sccm、CH4：1及H2：50sccm)成長石墨烯，其片電阻達到450~900(Ω/□)、載子遷移率850~1050(cm2/Vs)。 | zh_TW |
| dc.description.abstract |
In recent years, gaphene is an interesting material. Graphene has high conductivity, transmittance and strength characteristics. There are many processes to produce graphene. Among these processes, high-temperature chemical vapor deposition method is the best one to produce the high-quality graphene, but the production waste a lot of time, and it is expensive. So the shorten time of production and large-area graphene are the major researching trend in the graphene technology.
This study applies rapid thermal process system for shortening the graphene growth time from 180 minute to 40 minute. Copper foil is the substrate. The high temperature (1080 oC) used for annealing. X-ray Diffractometer adopted to know crystal direction of copper of Cu (111). Atomic force microscope reveals the reducing roughness. Growing the density of graphene analyzes by using scanning electron microscope. The hydrogen is important to grow graphene. Using Raman spectrometer and Hall for the analysis, The result indicated that the most successful condition is at 1080oC annealing temperature for 10 minutes(Ar：1000 sccm、H2：20 sccm), growth of graphene for 10 minutes (Ar：1000 sccm、CH4：1 sccm、H2：50 sccm), the sheet resistance is 450 ~ 900 (Ω / □), and the carrier mobility is 850 ~ 1050 (cm2 / Vs). | en_US |
| DC.subject | 石墨烯 | zh_TW |
| DC.subject | 化學氣象沉積法 | zh_TW |
| DC.subject | 快速熱退火 | zh_TW |
| DC.subject | 銅箔 | zh_TW |
| DC.subject | graphene | en_US |
| DC.subject | chemical vapor deposition | en_US |
| DC.subject | rapid thermal annealing | en_US |
| DC.subject | copper foil | en_US |
| DC.title | 快速熱退火之石墨烯特性分析 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Characteristic analysis of graphene by rapid thermal annealing | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |