| dc.description.abstract | Due to the upcoming physical limit in the scaling down of semiconductor components, the killer material is necessary and urgent. Hundreds of two-dimensional (2D) materials expect to apply in various applications with their specific outstanding properties. Among them, graphene has been considered the promising material of electronic and optoelectronic components due to its excellent material properties. However, even graphene has outstanding electrical properties, tuning the electronic structures is an urgent issue due to the essential gapless. More important, the high-yield synthesis technology of high-quality graphene still needs to be developed. Herein, high porosity material is helically stacked with Cu foil for increasing furnace tube utilization. Also, with the computational fluid dynamics simulation, the porosity material is the critical component for reaction gas to diffuse inside the whole helical structure. Thus, the yield of a traditional 1-inch furnace is 2348 cm2/h is almost 4 times higher than the vertically stacked method. When the size of the furnace system is up to 8-inch, the yield can be up to at least 18 m2/h. Next, the industrial-level ion implantation approach was proposed to implant phosphorous ions, where phosphorus doping can provide more effective n-type behavior in graphene. Also, the gold protecting layer is employed to decline the keV implant energy and reduce the damage caused by the ions together with the post-annealing to heal the crystal defect. Thus, the low-damaged graphene with 2 – 4 at% doping concentration can obtain. In addition, the doped graphene with tunable work functions (4.85 – 4.15 eV) and stable n-type doping while keeping high carrier mobility, 450 cm2/V·s, are realized. Besides, the emerging two-dimensional material, antimonene, has attracted intensive attention because of the 2.28 eV bandgap, excellent electrical properties, and high atmospheric environmental stability. Due to the lack of a reliable synthesis method, the current reports focused on the theoretical calculation. Therefore, in this study, the vapor transport deposition was applied to exploiting the synthesis mechanism of antimonene film by the comprehensive parametric investigation, including the pressure, temperature, powder weight, and growth time. This study contributes essential results to advance the growth mechanism based on vapor transport deposition. It found out that antimonene tends to form the single-crystal structure than the layered structure; the adatom cohesive between Sb atoms is considered to be stronger than surface adhesive force. Therefore, the growth model of Sb thin-film growth belongs to the Volmer-Weber mode, where it limits the increase of lateral size when extending growth time and blocks the continuous synthesis of monolayer films. Also, the density of the single-crystal antimonene could suppress by regulating the hydrogen flow, which increases the Sb vapor by reducing the Sb2O3. Besides, the overflowing hydrogen could limit the synthesis of single-crystal antimonene due to the abundant by-product (H2O) reacting and etching or saturating the edge of Sb flake at down steam. In addition, the synthesized single-crystal antimonene encapsulated in bilayer graphene can observe the stability of antimonene near the vaporized temperature, 400 to 600℃. This work contributes to tailoring 2D materials′ electrical properties with an exceptional low defect density, suggests surpassing potential for integrating with modern semiconductor technology for next-generation 2D-based nanoelectronics, and provides the investigation of synthesis mechanism on the novel semiconductor materials. | en_US |