| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 沈韋廷 | zh_TW |
| DC.creator | Wei-ting Shen | en_US |
| dc.date.accessioned | 2016-6-28T07:39:07Z | |
| dc.date.available | 2016-6-28T07:39:07Z | |
| dc.date.issued | 2016 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=103521039 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本篇論文中，我們利用C語言模擬半導體元件特性。發現在切割網格時會如果出現180°切角，這會造成模擬上的誤差，而為了減少這誤差產生，我們將180°切角切割成不同角度，其中會出現鈍角三角形網格，所以我們開發了鈍角三角形模組來解決這問題。先利用單一鈍角三角形模組驗證，再經由模擬電阻與實際電阻值比較，及二極體的模擬驗證來確保模擬的正確性，最後應用在包含鈍角三角形網格的相關應用，例如:MOS電容器、180°切角的改善、局部網格加密時會出現的180°切角問題，都不會造成過大的誤差，並且成功改善了鈍角三角形網格模擬上的誤差。 | zh_TW |
| dc.description.abstract | In this thesis, we use C language to simulate semiconductor device characteristics. We found that the 180°-angle mesh will cause simulation problem. It may have a triangle mesh with an obtuse angle if we divide the 180° angle into two angles. In order to simulate the obtuse triangle mesh, it’s necessary to develop an obtuse triangle model for 2D device simulation. The validity of a single obtuse triangle model is verified by numerical experiment. We simulate a resister and compare its result to the theoretical value. Finally, applying this obtuse model to many applications, such as MOS capacitor, 180°-angle problem, in mesh regrid. | en_US |
| DC.subject | 半導體模擬 | zh_TW |
| DC.subject | 二維 | zh_TW |
| DC.subject | semiconductor simulation | en_US |
| DC.subject | two-dimensional | en_US |
| DC.title | 鈍角三角形的邊線向量與內部向量探討及其在二維元件模擬之應用 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |