博碩士論文 103521044 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	張博堯	zh_TW
DC.creator	Po-Yao Chang	en_US
dc.date.accessioned	2016-6-28T07:39:07Z
dc.date.available	2016-6-28T07:39:07Z
dc.date.issued	2016
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=103521044
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	在本篇論文中，我們主要使用C語言，建立出一套可以更精確模擬半導體元件，其為增點式正方形網格。用來提升模擬二維半導體元件之不規則接面處的準確度，並且比較傳統之正方形網格與增點式正方形網格之差異性，接著使用簡易電阻作理論計算，再與模擬結果相互比較來驗證，即可得知此架構是否設計正確並可行。最後，我們將增點式正方形網格應用在不規則形狀之半導體元件及應用在MOS電容器結構上，並加以探討在半導體元件上之不規則接面處，其臨限電壓與能帶曲線圖的變化與影響。	zh_TW
dc.description.abstract	In this thesis, we use C++ language to develop a new point-added square element for 2-D device simulation. It is used to improve the simulation of 2-D semiconductor device on irregular junction. Besides, we compare the difference between the traditional square element and point-added square element, and a simple resistor will be used to verify our result with theoretical value. After finishing these process, the point-added square element can be used in our simulation. In addition, we use the point-added square element to apply on the special semiconductor device, such as the resistor that it looks like a ring shape. We can also apply this new element on MOS capacitor. At last, we discuss the variation of threshold voltage and energy band on irregular junction of semiconductor device.	en_US
DC.subject	網格	zh_TW
DC.subject	半導體	zh_TW
DC.subject	模擬	zh_TW
DC.subject	mesh	en_US
DC.subject	semiconductor	en_US
DC.subject	simulation	en_US
DC.title	增點式正方形網格開發及其在二維半導體元件模擬之應用	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Development of point-added square element and its applications to 2-D semiconductor device simulation	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US