DC 欄位 |
值 |
語言 |
DC.contributor | 電機工程學系 | zh_TW |
DC.creator | 張博堯 | zh_TW |
DC.creator | Po-Yao Chang | en_US |
dc.date.accessioned | 2016-6-28T07:39:07Z | |
dc.date.available | 2016-6-28T07:39:07Z | |
dc.date.issued | 2016 | |
dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=103521044 | |
dc.contributor.department | 電機工程學系 | zh_TW |
DC.description | 國立中央大學 | zh_TW |
DC.description | National Central University | en_US |
dc.description.abstract | 在本篇論文中,我們主要使用C語言,建立出一套可以更精確模擬半導體元件,其為增點式正方形網格。用來提升模擬二維半導體元件之不規則接面處的準確度,並且比較傳統之正方形網格與增點式正方形網格之差異性,接著使用簡易電阻作理論計算,再與模擬結果相互比較來驗證,即可得知此架構是否設計正確並可行。最後,我們將增點式正方形網格應用在不規則形狀之半導體元件及應用在MOS電容器結構上,並加以探討在半導體元件上之不規則接面處,其臨限電壓與能帶曲線圖的變化與影響。 | zh_TW |
dc.description.abstract | In this thesis, we use C++ language to develop a new point-added square element for 2-D device simulation. It is used to improve the simulation of 2-D semiconductor device on irregular junction. Besides, we compare the difference between the traditional square element and point-added square element, and a simple resistor will be used to verify our result with theoretical value. After finishing these process, the point-added square element can be used in our simulation. In addition, we use the point-added square element to apply on the special semiconductor device, such as the resistor that it looks like a ring shape. We can also apply this new element on MOS capacitor. At last, we discuss the variation of threshold voltage and energy band on irregular junction of semiconductor device. | en_US |
DC.subject | 網格 | zh_TW |
DC.subject | 半導體 | zh_TW |
DC.subject | 模擬 | zh_TW |
DC.subject | mesh | en_US |
DC.subject | semiconductor | en_US |
DC.subject | simulation | en_US |
DC.title | 增點式正方形網格開發及其在二維半導體元件模擬之應用 | zh_TW |
dc.language.iso | zh-TW | zh-TW |
DC.title | Development of point-added square element and its applications to 2-D semiconductor device simulation | en_US |
DC.type | 博碩士論文 | zh_TW |
DC.type | thesis | en_US |
DC.publisher | National Central University | en_US |