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In the silicon solar cell surface passivation has always been an important goal of design and optimization. In the early, the back electric field passivation has been stuided, and later researchers began to study the positive silicon nitride passivation, when the front passivation has been studied, the researchers also began to move the target to another serious compound area - the back surface of the cell. In the 1990s, the University of New South Wales (UNSW) began to introduce passivated PECR / PERL design of the dielectric layer to solve the problem of passivation on the back, but the serious recombination rate at the opening can not be resolved, so began to study hope to be able to solve the opening problem, passivated contact technology began to be raised.
In this study, silicon nitride film was deposited on silicon oxide films by wet chemical oxidation, photo-oxidation oxidation and plasma enhance chemical vapor deposition. The lifetime of silicon wafer was measured. FTIR can be seen from the figure that the position of the Si-O-Si bonding at the position of 1080 cm-1 by the wet chemical oxidation method. In this study, the silicon oxide film was grown by wet chemical oxidation method, and the change of different parameters. With the heat treatment, the lifetime can be increased to 1108 us, and the characteristics of film passivation were discussed. To find a structure of high density and low leakage current density of silicon oxide film.
Finally, the silicon oxide film was applied to the silicon solar cell, and the silicon solar cell with no silicon oxide film is compared with the photoelectric conversion efficiency. The open-circuit voltage of the silicon solar cell with the passivation layer was increased from the original 551 mV to 625 mV (up 13%), short circuit current 29.8 mA, fill factor 0.59, efficiency from 10.8% to 11.5%. | en_US |