| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 陳俞文 | zh_TW |
| DC.creator | Yu-Wen Chen | en_US |
| dc.date.accessioned | 2018-7-25T07:39:07Z | |
| dc.date.available | 2018-7-25T07:39:07Z | |
| dc.date.issued | 2018 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=104256009 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文針對薄膜電晶體液晶顯示器於微影製程時，對於電極圖案進行細線寬優化的方法。過去進行微影製程時，僅利用曝光機之曝光能量(exposure dosage)，對產品精度進行調整與控制，以至於產品精度低於預期。本文提供之方法，不僅使用曝光能量，並針對光阻厚度、及顯影時間進行田口實驗，使細線精度由3.5μm，優化至3.25μm以下，並使良率維持在97.5%以上 。 | zh_TW |
| dc.description.abstract | This paper focuses on the thin line optimization method for the electrode totem when the thin film transistor LCD is used in the lithography process. In the past, only the exposure dose of the exposure machine was used to adjust and control the accuracy of the product when the lithography process, so that the product accuracy was lower than our expected. The method provided in this paper not only uses the exposure energy, but also experiments on the thickness of the photoresist and the development time to optimize the line precision from 3.5 μm to 3.25 μm and maintain the yield at 97.5% or more. | en_US |
| DC.subject | 薄膜電晶體 | zh_TW |
| DC.subject | 液晶顯示器 | zh_TW |
| DC.subject | 精度 | zh_TW |
| DC.subject | Accuracy | en_US |
| DC.subject | TFT-LCD | en_US |
| DC.title | 薄膜電晶體液晶顯示器精度提升之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | The Research of Improvement of the Accuracy of Amorphous Silicon TFT-LCD | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |