| DC 欄位 |
值 |
語言 |
| DC.contributor | 機械工程學系 | zh_TW |
| DC.creator | 鄭詔元 | zh_TW |
| DC.creator | Chao-Yuan Cheng | en_US |
| dc.date.accessioned | 2017-6-21T07:39:07Z | |
| dc.date.available | 2017-6-21T07:39:07Z | |
| dc.date.issued | 2017 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=104323034 | |
| dc.contributor.department | 機械工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | ㄧ般而言，以電化學法製造N型多孔矽必須外加光源照射矽晶圓，以達電子-電洞對分離，產生電洞，才能進行蝕刻。另一方面，在近期研究指出使用外加電場、磁場或是P-N接面方式可暗室製造N型多孔矽。本研究應用金屬-半導體接面原理，以銅片電極為金屬端，N-Type矽晶圓為半導體端，在順向偏壓下使空間電荷區變薄，使得電子-電洞對分離，實現不以任何光源輔助即可蝕刻出N型多孔矽。另外，研究中發現使用1064nm雷射輔助蝕刻，發現能使多孔矽表面以及光激發光現象更為均勻。 | zh_TW |
| dc.description.abstract | In general, N-type Si must be illuminated in order to drive electrochemical etching, light generates electron-hole pairs. On the other hand, there are there novel methods to assist hole generation and enhance the growth porous silicon on n-type silicon in the dark, respectively, added electric field, magnetic field, P-N junction. This study is based on the principle of metal-semiconductor junction, the copper electrode is the metal side, the N-Type silicon wafer is the semiconductor side, and the space charge region is thinned under the forward bias,
so that the electron-hole pairs are separated, to achieve without any auxiliary light source can be etched N-type porous silicon. In addition, the study found that the use of 1064nm laser-assisted etching, porous silicon surface and the phenomenon of light excitation can be more uniform. | en_US |
| DC.subject | N型多孔矽 | zh_TW |
| DC.subject | 金屬-半導體接面 | zh_TW |
| DC.subject | 電化學蝕刻 | zh_TW |
| DC.subject | 順向偏壓 | zh_TW |
| DC.subject | 光激發光 | zh_TW |
| DC.subject | 暗室 | zh_TW |
| DC.subject | N-type porous silicon | en_US |
| DC.subject | metal-semiconductor junction | en_US |
| DC.subject | electrochemical etching | en_US |
| DC.subject | forward bias | en_US |
| DC.subject | photoluminescence | en_US |
| DC.subject | in the dark | en_US |
| DC.title | 應用金屬-半導體接面原理實現無光源下 製造N型多孔矽之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Study of application of metal-semiconductor junction principle on the production of N-type porous silicon in the dark | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |