dc.description.abstract | The research can be divided into two parts. The first one is Solution-processable low-voltage driven transparent oxide thin film transistor. The second is Donor Acceptor and linkage effect for transistor type memory devices application.
In the first part, we use ITO glass as substrate and gate. Then, about 120 nm TSO thin film was deposited on ITO glass. Its capacitance is approximately 172 nF cm-2, dielectric constant is 27.5. The TSO/ITO glass substrate was preheated to 400 oC, and then 65 nm ZnO semiconductor layer was deposited on it by using spray coating method, followed by annealing at 400 oC for 1 min. The elecrtrode was fabricated by two steps. Firstly, we deposited AgNWs through a shadow mask by using spray coating method. Then, we deposited another PEDOT:PSS layer through the shadow mask on the same position as we deposited AgNWs. The operation voltage of the thin film transistor is only 3 V, on/off current ratio 105, threshold voltage 0.36 V, subthreshold swing 815 mv dec-1, electron mobility 9.1 cm2 V-1 s-1. The results show the thin film transistor possessed well electrical characteristics and was stable under ambient air while doing experiment.
In the second part, we use SiO2/Si as substrate and deposited electret by using spin coating method. Electret layer is fabricated for the purpose of storing holes or electrons. In this work, the electrets are TPA-PIS (Triphenylamine Sulfonyl-containing polyimide)、TPA-PES (Triphenylamine Sulfonyl-containing polyether) and TPA-PETS (Triphenylamine Sulfonyl-containing polyester), respectively. By researching and analyzing the electric characteristics and structure effects, we can be told that transistor type memory devices based on the three materials are all volatile memory. Yet, different structure, energy level or other relative characteristics can influent electric characteristics of transistor type memory. Therefore, we can learn knowledge by analyzing the relationships between structure and its effects on memory characteristics. | en_US |