| dc.description.abstract | An in-situ monitoring system for the semiconductor process is presented, which is used to monitor the temperature of wafer surface, the growth-rate and the refractive index of thin film in the semiconductor thin film process. The principles of the monitoring system are based on the blackbody radiation theorem, the optical interference theorem, and combined with the displacement stage to achieve the results of the two-dimensional temperature measurement.
This research verifies the feasibility of the temperature measurement module by the experiment of heating wafer. In this measurement system, and detected the 405 nm and 940 nm thermal radiation for the different process, the 940 nm was used for general silicon wafer, and the 405 nm was used for the wafer with transparent, such as sapphire wafer, SiC wafer. For the two-dimensional temperature measurement, we detected the reflection light by the wafer to simulate the situation of heating wafer. For the thin film growth-rate measurement, this research designed a simulated experiment to verifies the thin film module, that is two wedge-prism clip the air layer, and changes the thickness by the piezoelectric(PZT) actuator, the measurement results compare with the return value of PZT.
The experiment results presented that the measurement system is suitable to measure the object with 500℃ above for the temperature measurement, and the results compared with the commercial pyrometer, the relative differences are about 1℃. For the thin film measurement, the system is suitable to measure the growth-rate down to 0.1 nm/s, and the results compared with PZT and the refractive index, the relative differences are respectively less than 1% and 0.1%.
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