dc.description.abstract |
High-speed, high-efficiency, and low power consumption vertical-cavity surface-emitting lasers (VCSELs) that operate at a wavelength of 850nm or around 1000nm have lately attracted a lot of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the modulation speed of VCSELs is one of the most important ways to meet the required data rate (56 Gbit/sec) for next generation OIs. Recently, the 850 nm VCSEL with a 30 GHz E-O bandwidth has been demonstrated, which can satisfy the >50 Gbit/sec on-off keying (OOK) transmission over OM4 multi-mode fiber (MMF). However, when the ambient temperature (T) reaches 85℃, the pre-emphasis driving circuit is usually necessary to be integrated with VCSEL to compensate the high-T induced speed degradation. To increase the detuning wavelength (~20 nm) in 850 nm VCSEL, or shift the lasing wavelength of VCSEL to 980 nm are both promising way to improve the high-T performance of VCSEL. Recently, by optimizing the photon lifetime inside the 980 nm VCSEL cavity, an almost invariable 3-dB E-O bandwidth as high as around 26 GHz and 50 Gbit/sec transmission data rate from RT to 85℃ operations can be achieved. In this work, we demonstrate a novel 940 nm VCSEL for the application of shortwave wavelength division multiplexing (SWDM) over MMF with state-of-the-art dynamic performances. By use of Zn-diffusion and oxide-relief apertures, such device can have a nearly 50Ω differential resistance, which usually matches very well with the external driving circuit, and achieve a 30 and 26 GHz 3-dB E-O bandwidth under RT and 85℃ operations, respectively. | en_US |