| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 邱韋豪 | zh_TW |
| DC.creator | Chiu-Wei Hao | en_US |
| dc.date.accessioned | 2017-6-29T07:39:07Z | |
| dc.date.available | 2017-6-29T07:39:07Z | |
| dc.date.issued | 2017 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=104521011 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本篇論文中主要使用C語言，設計一套四面體的網格來模擬元件的特性，根據分
析後，我們選擇使用重心來開發模組，因為重心法可以適用任意四面體，首先使用邊
線向量的方法來求得核心方程式所需要的參數，接著驗證電場、電子流密度、電洞流
密度的正確性，最後將四面體組合成立方體應用在N型矽半導體、P-N二極體、球座
標的球座標網格應用，並且將這些應用做理論的推導與程式模擬的結果作比較分析，
所有的模擬結果皆證實此四面體網格的廣泛性及可靠度。 | zh_TW |
| dc.description.abstract |
In this thesis, we use C++ language to develop a tetrahedron element for 3-D device simulation. Barycenter method can be applied to arbitrary tetrahedron, and we use the edge vector to obtain the parameters needed by the core equation, and verify the electric field, current density and hole current density. Finally, the tetrahedrons are combined into cube applied to the N-type silicon semiconductors, PN diodes, and the spherical coordinate. In addition, these applications are used for theoretical derivation and compared with the program simulation. All the simulation results confirm the reliability of this tetrahedron mesh. | en_US |
| DC.subject | 邊線向量 | zh_TW |
| DC.subject | 四面體 | zh_TW |
| DC.subject | internal vector | en_US |
| DC.subject | tetrehedron element | en_US |
| DC.title | 由邊線向量求四面體的內部向量及其在三維半導體元件模擬之應用 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Finding internal vector from the edge vector in arbitrary tetrehedron element for 3D semiconductor Device Simulation | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |